參數(shù)資料
型號: VSC7924KF
廠商: VITESSE SEMICONDUCTOR CORP
元件分類: 其它接口
英文描述: SONET/SDH 2.5Gb/s Laser Diode Driver
中文描述: SPECIALTY INTERFACE CIRCUIT, CQFP24
封裝: CERAMIC, STRAIGHT LEAD PACKAGE-24
文件頁數(shù): 4/12頁
文件大小: 110K
代理商: VSC7924KF
VITESSE
Preliminary Data Sheet
VSC7924
SONET/SDH 2.5Gb/s Laser Diode Driver
Page 4
G52156-0, Rev 3.0
05/01/01
VITESSE
SEMICONDUCTOR CORPORATION
741 Calle Plano
Camarillo, CA 93012
Tel: (800) VITESSE
FAX: (805) 987-5896
Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Calculation of the Maximum Case Temperature
The VSC7924 is designed to operate with a maximum junction temperature of 125
°
C. The rise from the
case to junction is determined by the power dissipation of the device. The power dissipation is determined by
the V
SS
current plus the operating I
MOD
and I
BIAS
currents.
The power of the chip is determined by the following formula:
P
D
=
(-
V
SS
*
I
SS
) + ((
V
IOUT
V
SS
) *
I
MOD
) + ((
V
IBIAS
V
SS
) *
I
BIAS
)
For example with:
V
SS
I
MOD
I
BIAS
V
IBIAS
V
IOUT
=
=
=
=
=
-5.2V
40mA
20mA
-2.0V
-2.0V
P
D
=
(-
5.2
*
220mA
) + ((
5.2 - 2.0
) *
40mA
) + ((
5.2
-
- 2.0
) *
20mA
)
P
D
=
1144mW + 128mW + 64mW = 1.336W
The thermal rise from junction to case is
θ
JC
*
P
D
. For the ceramic package,
θ
JC
= 25
°
C/W. Thus the ther-
mal rise is:
25
°
C/W * 1.336W = 33.4
°
C
The maximum case temperature is:
125
°
C
33.4
°
C = 91.6
°
C
The absolute maximum power dissipation of the device is at:
V
SS
I
MOD
I
BIAS
V
IBIAS
V
IOUT
=
=
=
=
=
-5.5V
60mA
50mA
0V
0V
P
D
=
(
5.5
*
220mA
) + (
5.5
*
60mA
) + (
5.5mA
*
50mA
)
P
D
=
1.815W
This will net a maximum junction to case thermal rise of: 1.815W * 25
°
C/W = 45.4
°
C
This situation will allow maximum case temperature of: 125
°
C
45.4
°
C = 79.6
°
C
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