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參數(shù)資料
| 型號(hào)： | VQ2004J |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Quad P-Channel 60-V (D-S) MOSFET |
| 中文描述： | 四P通道60 - V（下局副局長(zhǎng)）MOSFET的 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 58K |
| 代理商： | VQ2004J |
VQ2004J
Vishay Siliconix
www.vishay.com
11-2
Document Number: 70220
S-04279
—
Rev. C, 16-Jul-01
Limits
Parameter
Symbol
Test Conditions
Min
Typ
a
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
=
–
10 A
–
60
–
110
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
–
1 mA
–
2
–
3.4
–
4.5
V
V
DS
= 0 V, V
GS
=
30 V
100
Gate-Body Leakage
I
GSS
T
J
= 125 C
500
nA
V
DS
=
–
60 V, V
GS
= 0 V
–
10
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
–
48 V, V
GS
= 0 V, T
J
= 125 C
–
500
A
On-State Drain Current
b
I
D(on)
V
DS
=
–
10 V, V
GS
=
–
10 V
–
1
–
2
A
V
GS
=
–
10 V, I
D
=
–
1 A
2.5
5
Drain-Source On-Resistance
b
r
DS(on)
T
J
= 125 C
4.4
8
Forward Transconductance
b
g
fs
V
DS
=
–
10 V, I
D
=
–
0.5 A
200
325
Common Source Output Conductance
b
g
os
V
DS
=
–
7.5 V, I
D
=
–
0.1 A
0.45
mS
Dynamic
Input Capacitance
C
iss
75
150
Output Capacitance
C
oss
V
DS
=
–
25 V, V
GS
= 0 V
f = 1 MHz
40
60
pF
Reverse Transfer Capacitance
C
rss
18
25
Switching
c
t
d(on)
11
15
Turn-On Time
t
r
V
DD
=
–
25
V, R
L
= 47
I
D
–
0.5
A, V
GEN
=
–
10 V
R
= 25
G
30
40
t
d(off)
20
30
ns
Turn-Off Time
t
f
20
30
Notes
a.
b.
c.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
VPDV10
2%.
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