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參數(shù)資料
| 型號： | VP2020L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-200V，夾斷電流-0.12A的P溝道增強型MOSFET晶體管) |
| 中文描述： | P通道增強型MOSFET晶體管（最小漏源擊穿電壓，為200V，夾斷電流，0.12A的P溝道增強型MOSFET的晶體管） |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 73K |
| 代理商： | VP2020L |
VP2020L, BSS92
Vishay Siliconix
Document Number: 70210
S-00199—Rev. D, 1-Jan-00
www.Vishay Siliconix.com FaxBack
408-970-5600
11-3
20
0
–4
–8
–12
–16
–20
18
16
14
12
10
8
–100
–80
–60
0
0
–1
–5
–40
–20
–2
–3
–4
–500
0
–1
–2
–3
–4
–5
–400
–300
–200
–100
0
Ohmic Region Characteristics
Output Characteristics for Low Gate Drive
On-Resistance
Normalized On-Resistance
vs. Junction Temperature
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
V
GS
– Gate-Source Voltage (V)
V
GS
– Gate-Source Voltage (V)
–
I
–
I
–
I
V
DS
– Drain-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
V
GS
= –10 V
–5 V
–6 V
–55 C
T
J
= 125 C
V
DS
= –15 V
–0.02 A
I
D
= –0.1 A
T
J
– Junction Temperature ( C)
–4.5 V
–4 V
–3 V
–100
0
–0.4
–0.8
–1.2
–1.6
–2.0
–80
–60
–40
–20
0
V
GS
= –4 V
–3.6 V
–3 V
–2 V
V
GS
– Gate-Source Voltage (V)
–0.05 A
25
20
15
0
0
–50
–250
10
5
–100
–150
–200
V
GS
= –4.5 V
–10 V
2.25
2.00
1.75
0.50
–50
–10
150
1.50
1.25
30
70
110
1.00
0.75
V
GS
= –4.5 V
I
D
= –0.1 A
25 C
r
)
(
r
–
r
)
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相關代理商/技術參數(shù) |
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| VP2-0216 | 制造商:COOPER BUSSMANN 功能描述:Ind Power Wirewound 10.6uH 20% Ferrite 1.26A T/R |
| VP2-0216-R | 功能描述:固定電感器 10.6uH 0.76A 0.09ohms RoHS:否 制造商:AVX 電感:10 uH 容差:20 % 最大直流電流:1 A 最大直流電阻:0.075 Ohms 工作溫度范圍:- 40 C to + 85 C 自諧振頻率:38 MHz Q 最小值:40 尺寸:4.45 mm W x 6.6 mm L x 2.92 mm H 屏蔽:Shielded 端接類型:SMD/SMT 封裝 / 箱體:6.6 mm x 4.45 mm |
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| VP2-0216-R | 制造商:Cooper Bussmann / Coiltronics 功能描述:INDUCTOR |
| VP2029A-V | 制造商:BOTHHAND 制造商全稱:Bothhand USA, LP. 功能描述:10/100 BASE-T TRANSFOREMR |
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