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參數(shù)資料
| 型號： | VP0300 |
| 廠商： | Supertex, Inc. |
| 英文描述： | P-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | P通道增強模式垂直的DMOS場效應管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 53K |
| 代理商： | VP0300 |
7-228
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
VP0300
Thermal Characteristics
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
T
C
= 25
°
C
θ
ja
°
C/W
θ
jc
°
C/W
TO-92
-0.32A
-0.87A
1.0W
170
125
*
I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
V
GS(th)
I
GSS
I
DSS
Drain-to-Source Breakdown Voltage
-30
V
V
GS
= 0V, I
D
=-10
μ
A
V
GS
= V
DS
, I
D
= -1mA
V
GS
=
±
30V, V
DS
= 0V
V
GS
= 0V, V
DS
= -25V
V
GS
= 0V, V
DS
= -25V
T
A
= 125
°
C
V
GS
= -12V, V
DS
= -10V
V
GS
= -12V, I
D
= -1A
V
DS
= -10V, I
D
= -0.5A
Gate Threshold Voltage
-1.0
-1.8
-4.5
V
Gate Body Leakage
-100
nA
Zero Gate Voltage Drain Current
-10
-500
μ
A
I
D(ON)
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
(ON)
t
(OFF)
V
SD
ON-State Drain Current
-1.5
-1.7
A
Static Drain-to-SourceON-State Resistance
2.5
Forward Transconductance
200
m
Input Capacitance
150
Common Source Output Capacitance
120
pF
Reverse Transfer Capacitance
60
Turn-ON Time
30
ns
Turn-OFF Time
30
Diode Forward Voltage Drop
-1.2
V
V
GS
= 0V, I
SD
= -1.5A
Notes
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
V
GS
= 0V, V
DS
= -15V
f = 1MHz
V
DD
= -25V, I
D
= -1A
R
GEN
= 25
Switching Waveforms and Test Circuit
– OBSOLETE –
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| VP0350 | P-Channel Enhancement-Mode Vertical DMOS FETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VP0300B | 功能描述:MOSFET 30V 3A 6.25W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VP0300B-2 | 制造商:Vishay Siliconix 功能描述:P-CH ENHANCEMENT MOS TRANSISTOR 2 OHM (JANTX SIMILAR) - Bulk |
| VP0300B-E3 | 功能描述:MOSFET 30V 3A 6.25W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VP0300L | 功能描述:MOSFET 30V 0.32A 0.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VP0300LS | 功能描述:MOSFET 30V 0.5A 0.9W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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