參數(shù)資料
型號： VNS1NV04D
廠商： 意法半導(dǎo)體
英文描述： “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
中文描述： “OMNIFET二”：充分AUTOPROTECTED功率MOSFET
文件頁數(shù)： 13/14頁
文件大?。?/td> 244K
代理商： VNS1NV04D
13/14
VNS1NV04D
1
SO-8
TUBE SHIPMENT (no suffix)
All dimensions are in mm.
Base Q.ty
Bulk Q.ty
Tube length (
± 0.5)
A
B
C (± 0.1)
100
2000
532
3.2
6
0.6
TAPE AND REEL SHIPMENT (suffix “13TR”)
All dimensions are in mm.
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (
± 0.2)
F
G (+ 2 / -0)
N (min)
T (max)
2500
2500
330
1.5
13
20.2
12.4
60
18.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
All dimensions are in mm.
Tape width
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing
W
12
4
8
1.5
1.5
5.5
4.5
2
P0 (± 0.1)
P
D (± 0.1/-0)
D1 (min)
F (± 0.05)
K (max)
P1 (± 0.1)
Top
cover
tape
End
Start
No components
No components
Components
500mm min
500mm min
Empty components pockets
saled with cover tape.
User direction of feed
REEL DIMENSIONS
C
B
A
相關(guān)PDF資料
PDF描述
VNS3NV04D-E OMNIFET II fully autoprotected Power MOSFET
VNS3NV04D “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
VNS7NV04 “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
VNS7NV0413TR THERMISTOR, PTC; Series:B598; Thermistor type:PTC; Resistance:6R; Tolerance, resistance:+/-25%; Temp, op. max:125(degree C); Voltage, operating:160V; Case style:Radial; Current, tripping:0.8A; Diameter, body:17.5mm; Length, RoHS Compliant: Yes
VNT008D TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 5.77A I(D) | TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VNS1NV04D13TR 功能描述:MOSFET N-Ch 40V 1.7A Omni RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VNS1NV04D-E 功能描述:MOSFET N-Ch 40V 1.7A Omni RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VNS1NV04DP-E 功能描述:MOSFET OMNIFET POWER MOSFET 40V 1.7 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VNS1NV04DPTR-E 功能描述:MOSFET OMNIFET POWER MOSFET 40V 1.7 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VNS1NV04DTR-E 功能描述:MOSFET N-Ch 40V 1.7A Omni RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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