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參數(shù)資料
| 型號(hào)： | VNQ660SP |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | CLIP, ER9.5; Depth, external:4.5mm; Width, external:9.8mm RoHS Compliant: Yes |
| 中文描述： | 四通道高邊固態(tài)繼電器 |
| 文件頁數(shù)： | 8/16頁 |
| 文件大?。?/td> | 237K |
| 代理商： | VNQ660SP |
8/16
VNQ660SP
GND
REVERSE BATTERY
Solution 1: Resistor in the ground line (R
GND
only). This
can be used with any type of load.
The following is an indication on how to dimension the
R
GND
resistor.
1) R
GND
≤
600mV / (I
S(on)max
).
2) R
GND
≥ (
V
CC
) / (-I
GND
)
where -I
is the DC reverse ground pin current and can
be found in the absolute maximum rating section of the
device’s datasheet.
Power Dissipation in R
GND
(when V
CC
<0: during reverse
battery situations) is:
P
D
= (-V
CC
)
2
/R
GND
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where I
S(on)max
becomes the
PROTECTION
NETWORK
AGAINST
sum of the maximum on-state currents of the different
devices.
Please note that if the microprocessor ground is not
common with the device ground then the R
will
produce a shift (I
* R
) in the input thresholds
and the status output values. This shift will vary
depending on how many devices are ON in the case of
several high side drivers sharing the same R
GND
.
If the calculated power dissipation leads to a large resistor
or several devices have to share the same resistor then
the ST suggests to utilize Solution 2 (see below).
Solution 2: A diode (D
GND
) in the ground line.
A resistor (R
=1k
)
should be inserted in parallel to
D
GND
if the device will be driving an inductive load.
This small signal diode can be safely shared amongst
several different HSD. Also in this case, the presence of
the ground network will produce a shift (
j
600mV) in the
input threshold and the status output values if the
microprocessor ground is not common with the device
1
APPLICATION SCHEMATIC
V
CC1,2
D
ld
+5V
R
prot
STATUS
INPUT1
+5V
OUTPUT3
OUTPUT1
OUTPUT2
OUTPUT4
INPUT3
INPUT4
R
prot
R
prot
R
prot
R
prot
INPUT2
μ
C
GND
D
GND
R
GND
V
GND
Note: Channels 3 & 4 have the same internal circuit as channel 1 & 2.
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| VNQ660SP-E | 功能描述:電源開關(guān) IC - 配電 Quad Channel Hi-Side RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| VNQ660SPTR-E | 功能描述:電源開關(guān) IC - 配電 Quad Channel Hi-Side RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| VNQ690SP | 功能描述:固態(tài)繼電器-PCB安裝 QUAD CHNL HIGH SS RoHS:否 制造商:Omron Electronics 控制電壓范圍: 負(fù)載電壓額定值:40 V 負(fù)載電流額定值:120 mA 觸點(diǎn)形式:1 Form A (SPST-NO) 輸出設(shè)備:MOSFET 封裝 / 箱體:USOP-4 安裝風(fēng)格:SMD/SMT |
| VNQ690SP13TR | 功能描述:固態(tài)繼電器-PCB安裝 QUAD CHNL HIGH SS RoHS:否 制造商:Omron Electronics 控制電壓范圍: 負(fù)載電壓額定值:40 V 負(fù)載電流額定值:120 mA 觸點(diǎn)形式:1 Form A (SPST-NO) 輸出設(shè)備:MOSFET 封裝 / 箱體:USOP-4 安裝風(fēng)格:SMD/SMT |
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