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參數(shù)資料
| 型號(hào)： | VNQ600A-8960 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | QUAD CHANNEL HIGH SIDE SOLID STATE RELAY |
| 中文描述： | 四通道高邊固態(tài)繼電器 |
| 文件頁(yè)數(shù)： | 9/18頁(yè) |
| 文件大?。?/td> | 339K |
| 代理商： | VNQ600A-8960 |
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9/18
VNQ600A
GND
REVERSE BATTERY
Solution 1: Resistor in the ground line (R
GND
only). This
can be used with any type of load.
The following is an indication on how to dimension the
R
GND
resistor.
1) R
GND
≤
600mV / 2(I
S(on)max
).
2) R
GND
≥ (
V
CC
) / (-I
GND
)
where -I
is the DC reverse ground pin current and can
be found in the absolute maximum rating section of the
device’s datasheet.
Power Dissipation in R
GND
(when V
CC
<0: during reverse
battery situations) is:
P
D
= (-V
CC
)
2
/R
GND
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where I
becomes the
sum of the maximum on-state currents of the different
devices.
Please note that if the microprocessor ground is not
common with the device ground then the R
will
produce a shift (I
S(on)max
* R
GND
) in the input thresholds
PROTECTION
NETWORK
AGAINST
and the status output values. This shift will vary
depending on how many devices are ON in the case of
several high side drivers sharing the same R
GND
.
If the calculated power dissipation leads to a large resistor
or several devices have to share the same resistor then
the ST suggests to utilize Solution 2 (see below).
Solution 2: A diode (D
GND
) in the ground line.
A resistor (R
=1k
)
should be inserted in parallel to
D
GND
if the device will be driving an inductive load.
This small signal diode can be safely shared amongst
several different HSD. Also in this case, the presence of
the ground network will produce a shift (
j
600mV) in the
input threshold and the status output values if the
microprocessor ground is not common with the device
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
LOAD DUMP PROTECTION
D
is necessary (Voltage Transient Suppressor) if the
load dump peak voltage exceeds V
max DC rating. The
same applies if the device will be subject to transients on
the V
line that are greater than the ones shown in the
ISO T/R 7637/1 table.
1
APPLICATION SCHEMATIC
V
CC1,2
OUTPUT2
C. SENSE 1
D
ld
+5V
R
prot
OUTPUT1
R
SENSE1,2,3,4
INPUT1
C. SENSE 2
INPUT2
μ
C
R
prot
R
prot
R
prot
INPUT3
INPUT4
C. SENSE 3
C. SENSE 4
D
GND
R
GND
V
GND
GND1,2
GND3,4
OUTPUT3
R
prot
R
prot
R
prot
R
prot
V
CC3,4
OUTPUT4
Note: Channels 3 & 4 have the same internal circuit as channel 1 & 2.
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| VNQ600APTR-E | 功能描述:功率驅(qū)動(dòng)器IC QUAD CH HI-SIDE DRVR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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