參數(shù)資料
型號： VNP49N04FI
廠商： 意法半導(dǎo)體
英文描述： Fully Autoprotected Power MOSFET(全自動(dòng)保護(hù)功率MOSFET)
中文描述： 充分Autoprotected功率MOSFET（全自動(dòng)保護(hù)功率MOSFET的）
文件頁數(shù)： 3/13頁
文件大?。?/td> 147K
代理商： VNP49N04FI
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 15 V
V
gen
= 10 V
(see figure 3)
I
d
= 25 A
R
gen
= 10
200
1300
800
300
300
1800
1200
450
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 15 V
V
gen
= 10 V
(see figure 3)
I
d
= 25 A
R
gen
= 1000
1.3
3.8
12
6.1
1.9
5.2
14
8.5
μ
s
μ
s
μ
s
μ
s
A/
μ
s
(di/dt)
on
Turn-on Current Slope
V
DD
= 15 V
V
in
= 10 V
V
DD
= 15 V
I
D
= 25 A
R
gen
= 10
I
D
= 25 A
25
Q
i
Total Input Charge
V
in
= 10 V
100
nC
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
SD
(
)
t
rr
(
)
Forward On Voltage
I
SD
= 25 A
V
in
= 0
1.6
V
Q
rr
(
)
I
RRM
(
)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 25 A
V
DD
= 30 V
(see test circuit, figure 5)
di/dt = 100 A/
μ
s
T
j
= 25
C
250
910
7.5
ns
nC
A
PROTECTION
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
lim
Drain Current Limit
V
in
= 10 V
V
in
= 5 V
V
in
= 10 V
V
in
= 5 V
V
DS
= 13 V
V
DS
= 13 V
30
30
49
49
68
68
A
A
μ
s
μ
s
o
C
t
dlim
(
)
Step Response
Current Limit
35
90
50
150
T
jsh
(
)
Overtemperature
Shutdown
Overtemperature Reset
150
T
jrs
(
)
I
gf
(
)
135
o
C
Fault Sink Current
V
in
= 10 V
V
in
= 5 V
starting T
j
= 25
o
C
V
in
= 10 V
V
DS
= 13 V
V
DS
= 13 V
50
20
mA
mA
E
as
(
)
Single Pulse
Avalanche Energy
V
DD
= 20 V
L = 6 mH
R
gen
= 1 K
4
J
(
) Pulsed: Pulse duration =300
μ
s, duty cycle 1.5 %
(
) Parameters guaranteed by design/characterization
VNP49N04FI-VNB49N04-VNV49N04
3/13
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參數(shù)描述
VNP49N04FI-E 功能描述:MOSFET N-Ch 42V 49A OmniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VNP5N07 功能描述:MOSFET N-Ch 70V 5A OmniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VNP5N07 制造商:STMicroelectronics 功能描述:MOSFET SMART SWITCH TO-220
VNP5N07E 制造商:STMicroelectronics 功能描述:Power Switch Lo Side 5A 3-Pin(3+Tab) TO-220 Tube
VNP5N07-E 功能描述:MOSFET N-Ch 70V 5A OmniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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