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參數(shù)資料
| 型號： | VNK7N04FM |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | ”O(jiān)MNIFET”: FULLY AUTOPROTECTED POWER MOSFET |
| 中文描述： | “OMNIFET”：充分AUTOPROTECTED功率MOSFET |
| 文件頁數(shù)： | 2/14頁 |
| 文件大小： | 146K |
| 代理商： | VNK7N04FM |
ABSOLUTE MAXIMUMRATING
Symbol
Parameter
Value
Unit
DPAK
IPAK
ISOWATT220
SOT-82FM
V
DS
Drain-source Voltage (V
in
= 0)
Internally Clamped
V
V
in
Input Voltage
18
V
I
D
I
R
Drain Current
Internally Limited
A
Reverse DC Output Current
-7
A
V
esd
Electrostatic Discharge (C= 100 pF,
R=1.5 K
)
Total Dissipation at T
c
= 25
o
C
2000
V
P
tot
60
24
9
W
o
C
o
C
o
C
T
j
T
c
Operating Junction Temperature
Internally Limited
Case Operating Temperature
Internally Limited
T
stg
Storage Temperature
-55 to 150
THERMAL DATA
DPAK/IPAK
ISOWATT220
SOT82-FM
R
thj-case
Thermal Resistance Junction-case
Max
3.75
5.2
14
o
C/W
R
thj-amb
Thermal Resistance Junction-ambient
Max
100
62.5
100
o
C/W
ELECTRICAL CHARACTERISTICS
(-40 < T
j
< 125
o
C unless otherwisespecified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
CLAMP
Drain-source Clamp
Voltage
Drain-source Clamp
Threshold Voltage
Input-Source Reverse
Clamp Voltage
Zero Input Voltage
Drain Current (V
in
= 0)
I
D
= 200 mA
V
in
= 0
32
42
52
V
V
CLTH
I
D
= 2 mA
V
in
= 0
31
V
V
INCL
I
in
= -1 mA
-1.1
-0.25
V
I
DSS
V
DS
= 13 V
V
DS
= 25 V
V
in
= 0
V
in
= 0
75
200
μ
A
μ
A
μ
A
I
ISS
Supply Current from
Input Pin
V
DS
= 0 V
V
in
= 10 V
250
550
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
IN(th)
Input Threshold
Voltage
Static Drain-source On
Resistance
V
DS
= V
in
I
D
+ Ii
n
= 1 mA
0.8
3
V
R
DS(on)
V
in
= 10 V
V
in
= 5 V
-40 < T
j
< 25
o
C
V
in
= 10 V
V
in
= 5 V
T
j
= 125
o
C
I
D
= 3.5 A
I
D
= 3.5 A
I
D
= 3.5 A
I
D
= 3.5 A
0.14
0.28
0.28
0.56
VND7N04/VND7N04-1/VNP7N04FI/VNK7N04FM
2/14
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