參數(shù)資料
型號： VNH3ASP30TR-E
廠商： 意法半導體
元件分類： 基準電壓源/電流源
英文描述： AUTOMOTIVE FULLY INTEGRATED H-BRIDGE MOTOR DRIVER
中文描述： 汽車完全集成的H橋電機驅(qū)動
文件頁數(shù)： 9/18頁
文件大?。?/td> 138K
代理商： VNH3ASP30TR-E
9/18
VNH3ASP30-E
Table 16. Electrical Transient Requirements
Reverse Battery Protection
Three possible solutions can be thought of:
a) a Schottky diode
D
connected to V
CC
pin
b) a N-channel MOSFET connected to the GND
pin (see Typical Application Circuit on fig. 5)
c) a P-channel MOSFET connected to the V
CC
pin.
The device sustains no more than -30A in reverse
battery conditions because of the two Body diodes
of the Power MOSFETs. Additionally, in reverse
battery condition the I/Os of VNH3ASP30 will be
pulled down to the V
CC
line (approximately -1.5V).
Series resistor must be inserted to limit the current
sunk from the microcontroller I/Os. If I
Rmax
is the
maximum target reverse current through
μ
C I/Os,
series resistor is:
ISO T/R
7637/1
Test Pulse
1
2
3a
3b
4
5
Test Level
I
Test Level
II
Test Level
III
Test Level
IV
Test Levels
Delays and Impedance
-25V
+25V
-25V
+25V
-4V
+26.5V
-50V
+50V
-50V
+50V
-5V
+46.5V
-75V
+75V
-100V
+75V
-6V
+66.5V
-100V
+100V
-150V
+100V
-7V
+86.5V
2ms, 10
0.2ms, 10
0.1
μ
s, 50
0.1
μ
s, 50
100ms, 0.01
400ms, 2
ISO T/R
7637/1
Test Pulse
1
2
3a
3b
4
5
Test Levels Result
I
Test Levels Result
II
Test Levels Result
III
Test Levels Result
IV
C
C
C
C
C
C
C
C
C
C
C
E
C
C
C
C
C
E
C
C
C
C
C
E
Class
C
Contents
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device are not performed as designed after exposure to disturbance
and cannot be returned to proper operation without replacing the device.
E
R
VIOs
---------------------------------
VCC
–
IRmax
=
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VNH3SP30 制造商:STMicroelectronics 功能描述:H-BRIDGE MOTOR DRVR 30PIN MULTIPWRSO - Rail/Tube
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