參數(shù)資料
型號: VNH3ASP30-E
廠商: 意法半導體
元件分類: 基準電壓源/電流源
英文描述: AUTOMOTIVE FULLY INTEGRATED H-BRIDGE MOTOR DRIVER
中文描述: 汽車完全集成的H橋電機驅動
文件頁數(shù): 8/18頁
文件大?。?/td> 138K
代理商: VNH3ASP30-E
VNH3ASP30-E
8/18
Figure 5. Typical Application Circuit For Dc To 20KHz PWM Operation
In case of a fault condition the DIAG
X
/EN
X
pin is consid-
ered as an output pin by the device.
The fault conditions are:
- overtemperature on one or both high sides (for example
if a short to ground occurs as it could be the case
described in line 1 and 2 in the table below);
- short to battery condition on the output (saturation
detection on the Low-Side Power MOSFET).
Possible origins of fault conditions may be:
OUT
A
is shorted to ground ---> overtemperature
detection on high side A.
OUT
A
is shorted to V
CC
---> Low-Side Power MOSFET
saturation detection.
When a fault condition is detected, the user can know
which power element is in fault by monitoring the IN
A
,
IN
B
, DIAG
A
/EN
A
and DIAG
B
/EN
B
pins. In any case,
when a fault is detected, the faulty leg of the bridge is
latched off. To turn-on the respective output (OUT
X
)
again, the input signal must rise from low to high level.
Table 15. Truth Table In Fault Conditions (detected on OUT
A
)
M
μ
C
Reg 5V
+ 5V
HS
A
HS
B
LS
A
LS
B
V
CC
DIAG
A
/EN
A
1K
CS
IN
A
PWM
OUT
A
OUT
B
D
S
G
b) N MOSFET
3.3K
1K
1K
10K
33nF
1.5K
V
CC
100K
IN
A
IN
B
DIAG
A
/EN
A
DIAG
B
/EN
B
OUT
A
OUT
B
CS
1
1
0
1
OPEN
H
High Imp.
1
0
0
1
OPEN
L
High Imp.
0
1
0
1
OPEN
H
I
OUTB
/K
0
0
0
1
OPEN
L
High Imp.
X
X
0
0
OPEN
OPEN
High Imp.
X
1
0
1
OPEN
H
I
OUTB
/K
X
0
0
1
OPEN
L
High Imp.
Fault Information
Protection Action
相關PDF資料
PDF描述
VNH3ASP30TR-E AUTOMOTIVE FULLY INTEGRATED H-BRIDGE MOTOR DRIVER
VNH3SP30-E Automotive fully integrated H-bridge motor driver
VNH3SP30 FULLY INTEGRATED H-BRIDGE MOTOR DRIVER
VNH50N04 Fully Autoprotected Power MOSFET(全自動保護功率MOSFET)
VNH70N07 Fully Autoprotected Power MOSFET(全自動保護功率MOSFET)
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