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參數(shù)資料
| 型號： | VNH100N04 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Fully Autoprotected Power MOSFET(全自動保護(hù)功率MOSFET) |
| 中文描述： | 充分Autoprotected功率MOSFET（全自動保護(hù)功率MOSFET的） |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 91K |
| 代理商： | VNH100N04 |
During
electrically connected to the gate of the internal
power MOSFET. The device then behaves like a
standard power MOSFET and can be used as a
switch from DC to 50 KHz. The only difference
from the user’s standpoint is that a small DC
current (I
iss
) flows into the Input pin in order to
supply the internal circuitry.
The device integrates:
–
OVERVOLTAGE
CLAMP
internally set at 42V, along with the rugged
avalanche
characteristics
MOSFET stage give this device unrivalled
ruggedness and energy handling capability.
This feature is mainly important when driving
inductive loads.
–
LINEAR CURRENT LIMITER CIRCUIT: limits
the drain current Id to Ilim whatever the Input
pin voltage. When the current limiter is active,
the device operates in the linear region, so
power dissipation may exceed the capability of
the
heatsink.
Both
temperatures increase, and if this phase lasts
long enough, junction temperature may reach
the overtemperature threshold T
jsh
.
normal
operation,
the
Input
pin
is
PROTECTION:
of
the
Power
case
and
junction
–
OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION: these are based on sensing
the chip temperature and are not dependent on
the input voltage. The location of the sensing
element on the chip in the power stage area
ensures fast, accurate detection of the junction
temperature. Overtemperature cutout occurs in
the range 150 to 190
o
C, a typical value being
170
o
C. The device is automatically restarted
when the chip temperature falls below 135
o
C.
–
STATUS FEEDBACK: In the case of an
overtemperature
fault
Feedback is provided through the Input pin.
The internal protection circuit disconnects the
input from the gate and connects it instead to
ground via an equivalent resistance of 200
.
The failure can be detected by monitoring the
voltage at the Input pin, which will be close to
ground potential.
Additional
features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit (with a smallincrease in R
DS(on)
).
condition,
a
Status
PROTECTION FEATURES
VNH100N04
4/7
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