參數(shù)資料
型號: VND5050J-E
廠商: 意法半導(dǎo)體
英文描述: Double channel high side driver with analog current sense for automotive applications
中文描述: 雙通道模擬汽車應(yīng)用的電流檢測的高邊驅(qū)動器
文件頁數(shù): 5/28頁
文件大?。?/td> 694K
代理商: VND5050J-E
VND5050J-E / VND5050K-E
Electrical specifications
5/28
2.2
Thermal Data
Symbol
Parameter
Value
Unit
PowerSSO-12
PowerSSO-24
2.3
Electrical Characteristics
8V<V
CC
<36V; -40°C<T
j
<150°C, unless otherwise specified.
Power section
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Table 3.
Thermal Data
R
thj-case
Thermal resistance junction-case (Max.)
(with one channel ON)
2.8
2.8
°C/W
R
thj-amb
Thermal resistance junction-ambient (Max.)
See
Figure 31
See
Figure 35
°C/W
Table 4.
V
CC
Operating supply voltage
4.5
13
36
V
V
USD
Undervoltage shutdown
3.5
4.5
V
V
USDhyst
Undervoltage shut-down
hysteresis
0.5
V
R
ON
On state resistance
(2)
I
OUT
=2A; T
j
=25°C
I
OUT
=2A; T
j
=150°C
I
OUT
=2A; V
CC
=5V; T
j
=25°C
50
100
65
m
m
m
V
clamp
Clamp Voltage
I
S
=20mA
41
46
52
V
I
S
Supply current
Off State; V
CC
=13V; T
j
=25°C;
V
IN
=V
OUT
=V
SENSE
=V
CSD
=0V
On State; V
CC
=13V; V
IN
=5V; I
OUT
=0A
2
(1)
3
5
(1)
6
μA
mA
I
L(off1)
Off state output current
(2)
V
IN
=V
OUT
=0V; V
CC
=13V; T
j
=25°C
V
IN
=V
OUT
=0V; V
CC
=13V; T
j
=125°C
0
0
0.01
3
5
μA
I
L(off2)
Off state output current
(2)
V
IN
=0V; V
OUT
=4V
-75
0
V
F
Output - V
CC
diode voltage
(2)
-I
OUT
=4A; T
j
=150°C
0.7
V
(1) PowerMOS leakage included.
(2) For each channel
Table 5.
Switching (V
CC
=13V)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on delay time
R
L
=6.5
(see
Figure 5
)
R
L
=6.5
(see
Figure 5
)
R
L
=6.5
R
L
=6.5
20
μs
t
d(off)
Turn-off delay time
40
μs
dV
OUT
/dt
(on)
Turn-on voltage slope
see
Figure 22
V
/
μs
dV
OUT
/dt
(off)
Turn-off voltage slope
see
Figure 24
V
/
μs
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