- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359405 > VND5050AJ-E (意法半導(dǎo)體) Double channel high side driver with analog current sense for automotive applications PDF資料下載
參數(shù)資料
| 型號(hào)： | VND5050AJ-E |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Double channel high side driver with analog current sense for automotive applications |
| 中文描述： | 雙通道模擬汽車應(yīng)用的電流檢測的高邊驅(qū)動(dòng)器 |
| 文件頁數(shù)： | 15/26頁 |
| 文件大小： | 717K |
| 代理商： | VND5050AJ-E |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁當(dāng)前第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁
VND5050AJ-E / VND5050AK-E
Application information
15/26
3
Application information
Figure 24. Application schematic
3.1
GND protection network against reverse battery
3.1.1
Solution 1:
Resistor in the ground line (R
GND
only). This can be used with any type of load.
The following is an indication on how to dimension the R
GND
resistor.
1.
R
GND
≤
600mV / (I
S(on)max
).
2.
R
GND
≥ (
V
CC
) / (-I
GND
)
where -I
GND
is the DC reverse ground pin current and can be found in the absolute
maximum rating section of the device datasheet.
Power Dissipation in R
GND
(when V
CC
<0: during reverse battery situations) is:
P
D
= (-V
CC
)
2
/R
GND
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
S(on)max
becomes the sum of the
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
GND
will produce a shift (I
S(on)max
* R
GND
) in the input thresholds and the status output
values. This shift will vary depending on how many devices are ON in the case of several
high side drivers sharing the same R
GND
.
V
CC
GND
OUTPUT
D
GND
R
GND
D
ld
μ
C
+5V
V
GND
CS_DIS
INPUT
R
prot
R
prot
CURRENT SENSE
R
SENSE
R
prot
Note: Channel 2 has the same internal circuit as channel 1.
C
EXT
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VND5050J-E | Double channel high side driver with analog current sense for automotive applications |
| VND5N0713TR | ?OMNIFET?: FULLY AUTOPROTECTED POWER MOSFET |
| VND5N07FI | ?OMNIFET?: FULLY AUTOPROTECTED POWER MOSFET |
| VND5N07FM | ?OMNIFET?: FULLY AUTOPROTECTED POWER MOSFET |
| VND5N07-1 | ?OMNIFET?: FULLY AUTOPROTECTED POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VND5050AJ-E_08 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Double channel high side driver with analog current sense for automotive applications |
| VND5050AJTR-E | 功能描述:功率驅(qū)動(dòng)器IC Double Ch Hi Side Driver analog RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VND5050AK-E | 功能描述:功率驅(qū)動(dòng)器IC Double Ch Hi Side Driver analog RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VND5050AKTR-E | 功能描述:功率驅(qū)動(dòng)器IC Double Ch Hi Side Driver analog RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VND5050J-E | 功能描述:功率驅(qū)動(dòng)器IC Double Ch Hi Side Driver auto RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。