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參數(shù)資料
| 型號(hào)： | VN88AFD |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓80V,夾斷電流1.29A的N溝道增強(qiáng)型MOSFET晶體管) |
| 中文描述： | N溝道增強(qiáng)型MOSFET晶體管（最小漏源擊穿電壓80V的，夾斷電流1.29A的N溝道增強(qiáng)型MOSFET的晶體管） |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 72K |
| 代理商： | VN88AFD |
2N6661/VN88AFD
2
Siliconix
P-37655—Rev. B, 25-Jul-94
Specifications
a
Limits
2N6661
VN88AFD
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 10 A
125
90
80
V
DS
= V
GS
, I
D
= 1 mA
1.6
0.8
2
0.8
2.5
V
Gate-Threshold Voltage
V
GS(th)
T
C
= 55 C
1.8
T
C
= 125 C
1.3
Gate Body Leakage
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
15 V
100
100
nA
T
C
= 125 C
500
500
V
DS
= 90 V, V
GS
= 0 V
10
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 80 V, V
GS
= 0 V
10
A
V
DS
= 0.8 x V
(BR)DSS
, V
GS
= 0 V
1
T
C
= 125 C
500
500
On State Drain Current
On-State Drain Current
c
I
D(on)
)
V
DS
= 15 V, V
GS
= 10 V
1.8
1.5
A
V
DS
= 10 V, V
GS
= 10 V
1.8
1.5
V
GS
= 5 V, I
D
= 0.3 A
3.8
5.3
5.6
Drain-Source On-Resistance
c
r
DS(on)
V
GS
= 10 V, I
D
= 1 A
3.6
4
4
T
C
= 125 C
e
6.7
9
8
Forward Transconductance
c
g
fs
V
DS
= 10 V, I
D
= 0.5 A
350
170
170
mS
Diode Forward Voltage
V
SD
I
S
= 0.86 A, V
GS
= 0 V
0.9
V
Dynamic
Input Capacitance
C
iss
35
50
50
Output Capacitance
C
oss
V
DS
= 24 V, V
= 0 V
f = 1 MHz
15
40
40
pF
Reverse Transfer Capacitance
C
rss
GS
2
10
10
Drain-Source Capacitance
C
ds
30
40
Switching
d
Turn-On Time
t
ON
25
6
10
15
ns
Turn-Off Time
t
OFF
8
10
15
Notes
a.
b.
c.
d.
e.
T
A
= 25 C unless otherwise noted.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
This parameter not registered with JEDEC.
VNDQ09
2%.
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