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參數(shù)資料
| 型號： | VLB40-12S |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | SWITCH PB DPDT MOM RIGHT ANGLE |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.380 INCH, STUD PACKAGE-4 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 16K |
| 代理商： | VLB40-12S |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 50 mA
BV
CES
I
C
= 50 mA
BV
CEO
I
C
= 50 mA
BV
EBO
I
E
= 10 mA
I
CES
V
CE
= 15 V
h
FE
V
CE
= 5.0 V I
C
= 5.0 A
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
36
36
18
4.0
10
UNITS
V
V
V
V
mA
---
5.0
100
C
OB
V
CB
= 12.5 V f = 1.0 MHz
100
pF
P
G
η
C
V
CC
= 12.5 V P
OUT
= 40 W f = 50 MHz
13
60
dB
%
NPN SILICON RF POWER TRANSISTOR
VLB40-12S
DESCRIPTION:
The
ASI VLB40-12S
is Designed for
FEATURES:
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
5.0 A
V
CBO
36 V
V
CEO
18 V
V
EBO
4.0 V
P
DISS
70 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
T
J
T
STG
-65
O
C to +150
O
C
θ
JC
2.5
O
C/W
PACKAGE STYLE .380 4L STUD
ORDER CODE: ASI10736
MINIMUM
inches / mm
.004 / 0.10
.320 / 8.13
.100 / 2.54
.370 / 9.40
B
C
D
E
F
G
H
I
A
MAXIMUM
inches / mm
.385 / 9.78
.330 / 8.38
.130 / 3.30
.007 / 0.18
.090 / 2.29
.155 / 3.94
.100 / 2.54
.175 / 4.45
DIM
.220 / 5.59
.980 / 24.89
.230 / 5.84
.490 / 12.45
.450 / 11.43
J
.750 / 19.05
E
F
D
C
B
.112x45°
G
H
J
I
A
#8-32 UNC-2A
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|---|---|
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| VLF-1200 | Coaxial Low Pass Filter DC to 1200 MHz |
| VLF-120 | Coaxial Low Pass Filter DC to 120 MHz |
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