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參數(shù)資料
| 型號： | V96BMC |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | HIGH PERFORMANCE BURST DRAM CONTROLLER FOR i960Cx/Hx/Jx PROCESSORS |
| 中文描述： | 爆高性能的DRAM控制器的i960Cx/Hx/Jx處理器 |
| 文件頁數(shù)： | 9/14頁 |
| 文件大?。?/td> | 108K |
| 代理商： | V96BMC |
V96BMC Rev.D
Copyright 1998, V3 Semiconductor Corp.
V96BMC Rev D Data Sheet Rev 3.2
9
3.0 DC Specifications
1. For 3.3 Volt DRAM intreface operation.( See also note 8 table 11)
Table 5: Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
CC
Supply voltage
-0.3 to +7
V
V
IN
DC input voltage
-0.3 to V
CC
+0.3
V
I
IN
DC input current
± 50
mA
T
STG
Storage temperature
-65 to +150
°C
Table 6: Guaranteed Operating Conditions
Symbol
Parameter
Rating
Units
V
CC,
V
CC3
Supply voltage
4.75 to 5.25
V
V
CC3
Supply voltage for 3.3 Volt DRAM
interface
1
. Vcc is still as above
3.0 to 3.6
V
T
A
Ambient temperature range
0 to 70
°C
Table 7: DC Operating Specifications Vcc=5Volt and Vcc3=5 Volt
Symbol
Description
Conditions
Min
Max
Units
V
IL
Low level input voltage
Vcc = 4.75V
0.8
V
V
IH
High level input voltage
Vcc = 5.25V
2.0
V
I
IL
Low level input current
V
IN
= GND, V
CC
= 5.25V
-10
μ
A
I
IH
High level input current
V
IN
= V
CC
= 5.25V
10
μ
A
V
OL
Low level output voltage
V
IN
= V
IL
or
V
IH
I
OL
= -12 mA
0.4
V
V
OH
High level output voltage
V
IN
= V
IL
or
V
IH
I
OL
= -12 mA
V
CC
-1.0
V
I
OZL
Low level float input
leakage
V
IN
= V
IL
or
V
IH
V
O
= GND
-20
μ
A
I
OZH
High level float input
leakage
V
IN
= V
IL
or
V
IH
V
O
= 5.25V
20
μ
A
I
CC
(max)
Maximum supply current
Continuous simple access
Continuous burst access
100
30
mA
C
IO
Input and output
capacitance
20
pF
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