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參數(shù)資料
| 型號： | V8P10 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier |
| 中文描述： | 高電流密度表面貼裝戴MOS肖特基勢壘整流器 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 96K |
| 代理商： | V8P10 |
www.vishay.com
2
Document Number: 89005
Revision: 26-Jun-07
Vishay General Semiconductor
V8P10
New Product
Note:
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
Note:
(1) Units mounted on recommended P.C.B. 1 oz. pad layout
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP
MAX.
UNIT
Breakdown voltage
at I
R
= 1.0 mA T
j
= 25 °C
at I
F
= 4 A
at I
F
= 8 A
V
(BR)
100 (minimum)
-
V
Instantaneous forward voltage
(1)
T
j
= 25 °C
V
F
0.522
0.643
-
0.68
V
at I
F
= 4 A
at I
F
= 8 A
T
j
= 125 °C
0.466
0.582
-
0.62
Reverse current
(1)
at V
R
= 70 V
T
j
= 25 °C
T
j
= 125 °C
I
R
4.7
3.0
-
-
μA
mA
at V
R
= 100 V
T
j
= 25 °C
T
j
= 125 °C
14.5
7.0
70
15
μA
mA
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
R
θ
JA (1)
R
θ
JL
V8P10
UNIT
Typical thermal resistance
60
3
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
V8P10-E3/86A
0.10
86A
1500
7" Diameter Plastic Tape & Reel
V8P10-E3/87A
V8P10HE3/86A
(1)
V8P10HE3/87A
(1)
0.10
87A
6500
13" Diameter Plastic Tape & Reel
0.10
86A
1500
7" Diameter Plastic Tape & Reel
0.10
87A
6500
13" Diameter Plastic Tape & Reel
Figure 1. Maximum Forward Current Derating Curve
10
8
6
4
2
0
0
25
50
Lead Temperat
u
re (°C)
75
100
125
150
175
A
v
e
w
a
u
r
T
L
meas
u
red
at the cathode
b
and terminal
Resisti
v
e or Ind
u
cti
v
e Load
Figure 2. Forward Power Loss Characteristics
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0
2
4
6
8
10
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.
8
D = 1.0
A
v
erage For
w
ard C
u
rrent (A)
A
v
e
w
e
W
)
D = tp/T
tp
T
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| V8P10_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier |
| V8P10_11 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier |
| V8P10-E3/86A | 功能描述:肖特基二極管與整流器 8.0 Amp 100 Volt Single TrenchMOS RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| V8P10-E3/87A | 功能描述:肖特基二極管與整流器 8.0 Amp 100 Volt Single TrenchMOS RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| V8P10-E386A | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier |
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