- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄359335 > V826516G04S (Mosel Vitelic, Corp.) 128 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 16M x 64 PDF資料下載
參數(shù)資料
| 型號(hào)： | V826516G04S |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | 128 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 16M x 64 |
| 中文描述： | 128 MB的200 - pin的DDR SODIMM內(nèi)存2.5伏的緩沖1,600 × 64 |
| 文件頁(yè)數(shù)： | 9/14頁(yè) |
| 文件大小： | 275K |
| 代理商： | V826516G04S |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)當(dāng)前第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)
MOSEL VITELIC
V826516G04S
9
V826516G04S Rev. 1.5 March 2002
DDR SDRAM I
DD
SPEC TABLE
* Module I
DD
was calculated on the basis of component I
DD
and can be differently measured according to DQ loading cap.
Detailed test conditions for DDR SDRAM IDD1 & IDD
IDD1 : Operating current: One bank operation
1. Typical Case : Vdd = 2.5V, T=25’ C
2. Worst Case : Vdd = 2.7V, T= 10’ C
3. Only one bank is accessed with tRC(min), Burst Mode, Address and Control inputs on NOP edge are changing once
per clock cycle. lout = 0mA
4. Timing patterns
- DDR200(100Mhz, CL=2) : tCK = 10ns, CL2, BL=4, tRCD = 2*tCK, tRAS = 5*tCK
Read : A0 N R0 N N P0 N A0 N - repeat the same timing with random address changing
*50% of data changing at every burst
- DDR266B(133Mhz, CL=2.5) : tCK = 7.5ns, CL=2.5, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 5*tCK
Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing
*50% of data changing at every burst
- DDR266A (133Mhz, CL=2) : tCK = 7.5ns, CL=2, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 5*tCK
Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing
*50% of data changing at every burst
Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP
Symbol
B1(DDR266@CL=2)
B0(DDR266@CL=2.5) A1(DDR200@CL=2)
Unit
Notes
Typical
Worst
Typical
Worst
Typical
Worst
IDD0
800
880
800
880
640
720
mA
IDD1
1000
1120
1000
1120
800
920
mA
IDD2P
200
240
200
240
160
200
mA
IDD2F
360
440
360
440
320
360
mA
IDD2Q
280
320
280
320
240
280
mA
IDD3P
240
280
240
280
200
240
mA
IDD3N
400
480
400
480
320
400
mA
IDD4R
1360
1600
1360
1600
1120
1320
mA
IDD4W
1480
1720
1480
1720
1200
1360
mA
IDD5
1480
1720
1480
1720
1200
1360
mA
IDD6
Normal
16
16
16
16
16
16
16
Low power
8
8
8
8
8
8
8
Optional
IDD7A
2600
3000
2600
3000
2120
2480
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| V826516K04S | 2.5 VOLT 16M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE |
| V826532K04S | 2.5 VOLT 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE |
| V82658B04S | 64 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 8M x 64 |
| V82658J04S | 2.5 VOLT 8M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE |
| V826632B24S | 256 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 32M x 64 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| V826516K04S | 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:2.5 VOLT 16M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE |
| V826532K04S | 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:2.5 VOLT 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE |
| V82658B04S | 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:64 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 8M x 64 |
| V82658J04S | 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:2.5 VOLT 8M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE |
| V826632B24S | 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:256 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 32M x 64 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。