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參數(shù)資料
| 型號(hào)： | UT65L1616(I) |
| 英文描述： | 2 Mb (128K x 16) Boot Sector, Flash Memory |
| 中文描述： | 偽低功率SRAM |
| 文件頁(yè)數(shù)： | 6/13頁(yè) |
| 文件大?。?/td> | 175K |
| 代理商： | UT65L1616(I) |
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UTRON
UT65L1616(E)/UT65L1616(I)
Rev. 1.1
1M X 16 BITS LOW POWER PSEUDO SRAM
UTRON TECHNOLOGY INC.
P80080
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
2
FEATURES
Access time : 60/70ns (max.)
Low operating power
Operating current : 22mA (typ)
Standby current : 50uA (typ) LL-version
Power supply voltage : 2.5V~3.3V
Operating temperature :
Extended(E) : -25℃~80℃
Industrial(I) : -40℃~85℃
Low power modes
Deep power Down: Isb < 10uA
Three state output and TTL compatible
Separated I/O power (Vccq) & Core Power (Vcc)
Page mode operation by 8 words
Data byte control : LB (I/O1~I/O8)
UB (I/O9~I/O16)
Package : 48-pin 6.0mm × 8.0mm TFBGA
FUNCTIONAL BLOCK DIAGRAM
DECODER
I/O DATA
CIRCUIT
CONTROL
CIRCUIT
1M× 16
MEMORY
ARRAY
COLUMN I/O
OE
WE
A0-A19
Vccq
Vss
I/O1-I/O8
Lower Byte
I/O9-I/O16
Upper Byte
UB
LB
ZZ
CE
Vcc
GENERAL DESCRIPTION
The UT65L1616 is a 16,777,216-bit CMOS random
access memory organized as 1048,576 words by 16
bits. It is fabricated using PSEUDO SRAM techniques,
yields high-density and low power consumption
device.
The UT65L1616 is design for upper and low byte
access by data byte control ( UB 、LB ).It has low
power modes by using control pin ZZ .
PIN DESCRIPTION
SYMBOL
DESCRIPTION
A0 - A19
Address Inputs
I/O1 - I/O16
Data Inputs/Outputs
CE
Chip enable Input
WE
Write Enable Input
OE
Output Enable Input
LB
Lower Byte Control
UB
Upper Byte Control
ZZ
Low Power Modes
VCC
Core Power
Vccq
I/O power
VSS
Ground
NC
No Connection
PIN CONFIGURATION
A12
A11
A13
I/O9
A10
A14
I/O11
I/O10
A15
I/O6
I/O7
I/O8
A9
Vss
I/O12
A8
A16
I/O5
Vcc
Vccq
I/O4
A17
Vss
I/O13
Vss
NC
A7
A0
I/O3
I/O2
I/O15
I/O14
I/O1
A19
A6
A1
A3
A5
A18
I/O16
A4
A2
1
2
34
56
H
G
C
D
E
F
A
B
TFBGA
LB
OE
UB
ZZ
CE
WE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UT65L168(E) | Pseudo Low Power SRAM |
| UT65L168(I) | Pseudo Low Power SRAM |
| UT67164-55PBH | x8 SRAM |
| UT67164-55PBR | 2 Mb (128K x 16) Boot Sector, Flash Memory |
| UT6716455PCA | 256 Mb (16M x 16, 32M x 8) Boot Sector, Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UT65L168(E) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Pseudo Low Power SRAM |
| UT65L168(I) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Pseudo Low Power SRAM |
| UT65N03 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:65 Amps, 30 Volts, 3.7mΩ N-CHANNEL POWER MOSFET |
| UT65N03G-TA3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:65 Amps, 30 Volts, 3.7mΩ N-CHANNEL POWER MOSFET |
| UT65N03L-TA3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:65 Amps, 30 Volts, 3.7mΩ N-CHANNEL POWER MOSFET |
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