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參數(shù)資料
| 型號(hào)： | UT65L1616(E) |
| 英文描述： | 2 Mb (128K x 16) Boot Sector, Flash Memory |
| 中文描述： | 偽低功率SRAM |
| 文件頁(yè)數(shù)： | 2/13頁(yè) |
| 文件大?。?/td> | 175K |
| 代理商： | UT65L1616(E) |
第1頁(yè)當(dāng)前第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)
UTRON
UT65L1616(E)/UT65L1616(I)
Rev. 1.1
1M X 16 BITS LOW POWER PSEUDO SRAM
UTRON TECHNOLOGY INC.
P80080
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
10
PAGE READ CYCLE ( ZZ = WE =VIH, 8 words access )
data
valid
High - Z
tPAA
tPC
data
valid
tPAA
data
valid
tPAA
data
valid
tPAA
data
valid
tPAA
data
valid
tPAA
data
valid
tPAA
data
valid
tOHZ
tBHZ
tCHZ
tOH
tOLZ
tBA
tACE
tCLZ
tBLZ
tOE
tPC
tRC
tAA
A0~A2
A3~A18
CE
UB , LB
OE
Data Out
1. tCHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition, tCHZ(Max.) is less than tCLZ(Min.) both for a given device and from device to device
interconnection.
3. Do not access device with cycle timing shorter than tRC(tWC) for continuous periods > 40us
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UT65L1616(I) | 2 Mb (128K x 16) Boot Sector, Flash Memory |
| UT65L168(E) | Pseudo Low Power SRAM |
| UT65L168(I) | Pseudo Low Power SRAM |
| UT67164-55PBH | x8 SRAM |
| UT67164-55PBR | 2 Mb (128K x 16) Boot Sector, Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UT65L168(E) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Pseudo Low Power SRAM |
| UT65L168(I) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Pseudo Low Power SRAM |
| UT65N03 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:65 Amps, 30 Volts, 3.7mΩ N-CHANNEL POWER MOSFET |
| UT65N03G-TA3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:65 Amps, 30 Volts, 3.7mΩ N-CHANNEL POWER MOSFET |
| UT65N03L-TA3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:65 Amps, 30 Volts, 3.7mΩ N-CHANNEL POWER MOSFET |
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