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參數(shù)資料
| 型號(hào)： | US1A-HE3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封裝： | LEAD FREE, PLASTIC, SMA, 2 PIN |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 418K |
| 代理商： | US1A-HE3 |
US1A thru US1M
Document Number 88768
05-Aug-05
Vishay General Semiconductor
www.vishay.com
3
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Figure 3. Typical Instantaneous Forward Characteristics
0
0.4
1.2
0
75
25
50
100
125
150
0.8
0.2
0.6
1.0
Resistive or Inductive Load
0.2 x 0.2” (5.0 x 5.0 mm)
Copper Pad Areas
Lead Temperature (°C)
A
v
er
age
F
o
rw
ard
Rectified
C
u
rrent
(A)
0
15
20
25
10
5
30
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rg
e
C
u
rren
t(A)
1
10
100
TL = 110 °C
8.3 ms Single Half Sine-Wave
Tj = 150 °C
Tj = 125 °C
Tj = 100 °C
Tj = 25 °C
US1A-US1G
100
10
1
0,1
0,01
0,3
0,5
0,7
0,9
1,1
1,3
1,5
1,7
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
Figure 4. Typical Reverse Leakage Characteristics
Figure 5. Typical Instantaneous Forward Characteristics
Figure 6. Typical Reverse Leakage Characteristics
Instantaneo
u
s
Re
v
erse
Leakage
C
u
rrent
(
A)
Percent of Rated Peak Reverse Voltage (%)
020
40
60
80
100
Tj = 150 °C
Tj = 125 °C
Tj = 100 °C
Tj = 25 °C
US1A-US1G
100
10
1
0,1
0,01
Tj = 150 °C
Tj = 125 °C
Tj = 100 °C
Tj = 25 °C
US1J-US1M
0,2
0,7
1,2
1,7
2,2
2,7
3,2
Instantaneous Forward Voltage (V)
Instan
taneo
u
s
F
o
rw
ard
C
u
rrent
(A)
100
10
1
0,1
0,01
Tj = 150 °C
Tj = 125 °C
Tj = 100 °C
Tj = 25 °C
US1J-US1M
Instantaneo
u
s
Re
v
erse
Leakage
C
u
rrent
(
A)
Percent of Rated Peak Reverse Voltage (%)
1000
100
10
1
0,1
0,01
020
40
60
80
100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| US1B-HE3 | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC |
| US1G-HE3 | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC |
| US1J-E3 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC |
| US1K-HE3 | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC |
| US1AP | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| US1AHE3/2GT | 功能描述:整流器 50 Volt 1.0A 50ns 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| US1AHE3/5AT | 功能描述:整流器 50 Volt 1.0A 50ns 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| US1AHE3/61T | 功能描述:整流器 50 Volt 1.0A 50ns 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| US1AHE3/63T | 功能描述:整流器 50 Volt 1.0A 50ns 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| US1AHE3_A/H | 制造商:Vishay Semiconductors 功能描述:DIODE; Diode Type:Fast Recovery; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:50V; Forward Current If(AV):1A; Forward Voltage VF Max:1V; Reverse Recovery Time trr Max:50ns; Forward Surge Current Ifsm Max:30A ;RoHS Compliant: Yes |
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