參數(shù)資料
型號: UPD75P216ACW
廠商: NEC Corp.
英文描述: 4-BIT SINGLE-CHIP MICROCOMPUTER
中文描述: 4位單片機
文件頁數(shù): 10/28頁
文件大?。?/td> 281K
代理商: UPD75P216ACW
μ
PD75P216A
10
3.
ONE-TIME PROM (PROGRAM MEMORY) WRITE AND VERIFY
The
μ
PD75P216A contains 16256
×
8 bits of one-time PROM available of writing. The following table shows
the pin functions during the write and verify cycles. Note that it is not necessary to enter an address, because
the address is updated by pulsing the X1 clock pins.
Table 3-1
Used Pin at PROM Write and Verify
Pin name
Function
V
PP
Voltage application pin for write and verify
(Normally V
DD
potential)
X1, X2
Address-update clock input during write/verify.
The inverted signal of the X1 should be input to the X2.
MD0 - MD3
Operation mode selection pins for write and verify
P40 - P43 (lower 4 bits)
P50 - P53 (higher 4 bits)
8-bit data input/output pins for write and verify
V
DD
Supply voltage application pin
Normally 5 V
±
10 %; 6 V is applied during write/verify
Caution 1.
The pins which are not used during write or verify should be treated as follows
Port, XT1, RESET … Connect to V
SS
through pull-down resistors
S0 to S9, T0 to T15, PPO, V
LOAD
… Connect to V
DD
through pull-up resistors
XT2 … Open
The
μ
PD75P216A do not have a UV erase window, thus the PROM contents cannot be erased
with ultra violet ray.
2.
3.1
PROM WRITE AND VERIFY OPERATION
When +6 V and +12.5 V are applied to the V
DD
and V
PP
pins, respectively, the PROM is placed in the write/
verify mode. The operation is selected by the MD0 to MD3 pins, as shown in the table.
Table 3-2
PROM Write and Verify Operation
Operation mode specification
V
PP
V
DD
MD0
MD1
MD2
MD3
+12.5
+6 V
H
L
H
L
Clear program memory address to 0
L
H
H
H
Write mode
L
L
H
H
Verify mode
H
×
H
H
Program inhibit mode
×
: Don’t care.
Operation mode
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