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參數資料
| 型號： | UPD444008L |
| 廠商： | NEC Corp. |
| 英文描述： | 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT |
| 中文描述： | 4分位CMOS快速靜態(tài)存儲器為512k - Word的8位 |
| 文件頁數： | 5/16頁 |
| 文件大?。?/td> | 102K |
| 代理商： | UPD444008L |
5
μ
PD444008L
Data Sheet M14429EJ4V0DS
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
Parameter
Symbol
Test condition
MIN.
TYP.
MAX.
Unit
Input leakage current
I
LI
V
IN
= 0 V to V
CC
–2
+2
μ
A
Output leakage current
I
LO
V
I/O
= 0 V to V
CC
,
–2
+2
μ
A
/CS = V
IH
or /OE = V
IH
or /WE = V
IL
Operating supply current
I
CC
/CS = V
IL
,
Cycle time : 8 ns
185
mA
I
I/O
= 0 mA,
Cycle time : 10 ns
165
Minimum cycle time
Cycle time : 12 ns
155
Standby supply current
I
SB
/CS = V
IH
, V
IN
= V
IH
or V
IL
40
mA
I
SB1
/CS
≥
V
CC
– 0.2 V,
5
V
IN
≤
0.2 V or V
IN
≥
V
CC
– 0.2 V
High level output voltage
V
OH
I
OH
= –4.0 mA
2.4
V
Low level output voltage
V
OL
I
OL
= +8.0 mA
0.4
V
Remark
V
IN
: Input voltage
V
I/O
: Input / Output voltage
Capacitance (T
A
=
25
°
C, f = 1 MHz)
Parameter
Symbol
Test condition
MIN.
TYP.
MAX.
Unit
Input capacitance
C
IN
V
IN
= 0 V
6
pF
Input / Output capacitance
C
I/O
V
I/O
= 0 V
8
pF
Remarks 1.
V
IN
: Input voltage
V
I/O
: Input / Output voltage
2.
These parameters are periodically sampled and not 100% tested.
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