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參數(shù)資料
| 型號(hào)： | UPA843TC |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD |
| 中文描述： | NPN硅射頻晶體管2不同元素在一個(gè)平面，鉛6引腳薄型超超級(jí)MINIMOLD |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大?。?/td> | 76K |
| 代理商： | UPA843TC |
Preliminary Data Sheet P14679EJ2V0DS00
4
μ
PA843TC
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25
°
C)
1.0
0.1
1.0
0.1
10.0
100.0
R
r
Collector to Base Voltage V
CB
(V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
f = 1 MHz
Q1
Q2
300
250
230
200
150
100
50
0
25
50
75
100
125
150
T
t
Ambient Temperature T
A
(C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
2 Elements in total
Per Element
Mounted on Glass Epoxy Board
(1.08 cm
×
1.0 mm (t) )
DC Characteristics
Q1
Q2
40
30
20
10
0
6
4
2
8
10
C
C
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
I
B
50 A step
260 A
10 A
I
B
= 460 A
40
30
20
10
0
0.2
0.4
0.6
0.8
1
C
C
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 1 V
50
40
30
20
10
0
0.2
0.4
0.6
0.8
1
C
C
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 1 V
120
100
80
60
40
20
0
2
4
6
8
C
C
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
I
B
50 A step
I
B
= 560 A
260 A
10 A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA843TC-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD |
| UPA843TD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 210MA I(C) | TSOP |
| UPA843TD-T3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 210MA I(C) | TSOP |
| UPA844TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| UPA844TC-T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 3.3V V(BR)CEO | 35MA I(C) | TSOP |
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