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參數(shù)資料
| 型號(hào)： | UPA843TC-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD |
| 中文描述： | NPN硅射頻晶體管2不同元素在一個(gè)平面，鉛6引腳薄型超超級(jí)MINIMOLD |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大小： | 76K |
| 代理商： | UPA843TC-T1 |
Preliminary Data Sheet P14679EJ2V0DS00
2
μ
PA843TC
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
°
C)
Parameter
Symbol
Ratings
Unit
Q1
Q2
Collector to Base Voltage
V
CBO
15
9
V
Collector to Emitter Voltage
V
CEO
6
5.5
V
Emitter to Base Voltage
V
EBO
2
1.5
V
Collector Current
I
C
35
100
mA
Total Power Dissipation
P
tot
Note
200 in 1 element
230 in 2 elements
mW
Junction Temperature
T
j
150
°
C
Storage Temperature
T
stg
65 to +150
°
C
Note
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy substrate
ELECTRICAL CHARACTERISTICS (T
A
= +25
°
C)
(1) Q1
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
I
CBO
V
CB
= 5 V, I
E
= 0 mA
200
nA
Emitter Cut-off Current
I
EBO
V
EB
= 1 V, I
C
= 0 mA
200
nA
DC Current Gain
h
FE
Note 1
V
CE
= 1 V, I
C
= 5 mA
60
90
120
Gain Bandwidth Product
f
T
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
12
13.5
GHz
Insertion Power Gain
S
21e
2
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
8.5
10
dB
Noise Figure
NF
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
opt
1.3
2.5
dB
Reverse Transfer Capacitance
C
re
Note 2
V
CB
= 0.5 V, I
E
= 0 mA, f = 1 MHz
0.25
0.5
pF
(2) Q2
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
I
CBO
V
CB
= 5 V, I
E
= 0 mA
600
nA
Emitter Cut-off Current
I
EBO
V
EB
= 1 V, I
C
= 0 mA
600
nA
DC Current Gain
h
FE
Note 1
V
CE
= 1 V, I
C
= 5 mA
100
160
Gain Bandwidth Product (1)
f
T
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
3.5
5.0
GHz
Gain Bandwidth Product (2)
f
T
V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
5.5
6.5
GHz
Insertion Power Gain (1)
S
21e
2
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
3.5
4.0
dB
Insertion Power Gain (2)
S
21e
2
V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
4.5
5.5
dB
Noise Figure
NF
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
opt
1.5
2.5
dB
Reverse Transfer Capacitance
C
re
Note 2
V
CB
= 0.5 V, I
E
= 0 mA, f = 1 MHz
0.8
1.0
pF
Notes 1.
Pulse measurement: PW
≤
350
μ
s, Duty Cycle
≤
2 %
2.
Collector to base capacitance measured using capacitance meter (self-balancing bridge method) when
the emitter is connected to the guard pin
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