參數(shù)資料
型號(hào)： UPA814T-T1-A
廠商： California Eastern Laboratories
英文描述： NPN SILICON HIGH FREQUENCY TRANSISTOR
中文描述： NPN硅高頻晶體管
文件頁數(shù)： 2/4頁
文件大?。?/td> 157K
代理商： UPA814T-T1-A
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
T
T
Ambient Temperature, T
A
(
°
C)
Base to Emitter Voltage, V
BE
(V)
C
C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector to Emitter Voltage, V
CE
(V)
C
C
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C)
D
F
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Collector Current, I
C
(mA)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
G
T
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
I
2
I
2
UPA814T
200
100
0
50
100
150
2EemensinTta
Pe Eemen
Free Air
100
50
20
10
2
1
0.5
0.1
0.2
0.05
0.02
0.01
5
0
0.5
1
V
CE
= 1 V
30
20
10
0
1
2
3
4
5
6
200
μ
A
180
μ
A
160
μ
A
140
μ
A
120
μ
A
100
μ
A
80
μ
A
60
μ
A
40
μ
A
l
B
= 20
μ
A
200
100
0
1
2
5
10
20
50
0.1
0.2
0.5
100
V
CE
= 1 V
10
5
0
1
2
3
5
7
10
V
CE
= 1 V
f= 2 GHz
10
5
0
1
2
3
5
7
10
V
CE
= 1 V
f= 2 GHz
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