- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384038 > UPA507TE (NEC Corp.) P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PDF資料下載
參數(shù)資料
| 型號： | UPA507TE |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING |
| 中文描述： | P溝道MOS場效應(yīng)管與肖特基二極管的開關(guān) |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 146K |
| 代理商： | UPA507TE |
Data Sheet G16626EJ1V1DS
4
μ
PA507TE
MOS FET TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
d
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
°
C
P
T
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
25
50
75
100
125
150
175
Mounted on FR-4 board of
2500 mm
2
x 1.6 mm
T
A
- Ambient Temperature -
°
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- 0.01
- 0.1
- 1
- 10
- 100
- 0.1
- 1
- 10
- 100
100 ms
10 ms
I
D(pulse)
I
D(DC)
PW = 1 ms
R
DS(on)
Limited
(at V
GS
=
4.5 V)
Single pulse
Mounted on FR-4 board of
2500 mm
2
x 1.6 mm
5 s
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
t
°
C
1
100
μ
10
100
1000
Single pulse
Mounted on FR-4 board of
2500 mm
2
x 1.6 mm
P
D
(FET) : P (SBD) = 1: 0
PW - Pulse Width - s
1 m
10 m
100 m
1
10
100
1000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA573T | P-CHANNEL MOS FET 5-PIN 2 CIRCUITS FOR SWITCHING |
| UPA602T | N-CHANNEL MOS FET 6-PIN 2 CIRCUITS |
| UPA606T | N-CHANNEL MOS FET 6-PIN 2 CIRCUITS FOR SWITCHING |
| UPA611TA | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| UPA651TT | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA508TE | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING |
| UPA53C | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| UPA54H | 制造商:Panasonic Industrial Company 功能描述:DIODE |
| UPA54HA | 制造商:Panasonic Industrial Company 功能描述:DIODE |
| UPA56C | 制造商:NEC Electronics Corporation 功能描述:Bipolar Junction Transistor, Array, DIP |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。