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參數(shù)資料
| 型號： | UPA503T |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOSFET (5-PIN 2 CIRCUITS) |
| 中文描述： | P通道MOSFET（5針2電路） |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 60K |
| 代理商： | UPA503T |
μ
PA503T
4
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
100
50
0
–4
–8
–12
–16
–20
–1
–2
–5
–10
–20
–50
–100
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - mA
R
D
I
D
= –1 mA
I
D
= –10 mA
Pulsed measurement
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
150
100
50
0
R
D
V
= –4 V
Pulsed
measurement
T
A
= 150 C
75 C
25 C
–25 C
R
D
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
140
120
100
80
60
40
20
T
ch
- Channel Temperature - C
–30
0
30
60
90
120
150
C
i
,
o
,
r
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100
50
20
10
5
2
1
0.5
0.2
0.1
V
DS
- Drain to Source Voltage - V
0.1
–1
–2
–5
–10
–20
–50 –100
V
GS
= –4 V
I
= –10 mA
Pulsed measurement
t
d
,
r
,
d
,
f
SWITCHING CHARACTERISTICS
500
200
100
50
20
10
5
I
D
- Drain Current - mA
–5
–10
–20
–50
–100 –200
–500
V
SD
- Source to Drain Voltage - V
0.5
0.6
0.7
0.8
0.9
1
V
GS
= 0
f = 1 MHz
C
iss
C
rss
C
oss
t
r
t
d(on)
t
d(off)
t
f
V
DD
= –5.0 V
V
GS
= –4 V
R
G
= 10
I
D
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1
0.1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA507TE | P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING |
| UPA573T | P-CHANNEL MOS FET 5-PIN 2 CIRCUITS FOR SWITCHING |
| UPA602T | N-CHANNEL MOS FET 6-PIN 2 CIRCUITS |
| UPA606T | N-CHANNEL MOS FET 6-PIN 2 CIRCUITS FOR SWITCHING |
| UPA611TA | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA503T-T1-A | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 50V 0.1A 5-Pin SC-59 T/R |
| UPA504T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| UPA504T(T1-A) | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans GP BJT 0.1A 5-Pin SC-74A T/R |
| UPA504T-T1-A | 制造商:Renesas Electronics 功能描述:Cut Tape |
| UPA505T | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL/P-CHANNEL MOS FET 5-PIN 2 CIRCUITS |
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