參數(shù)資料
型號: UPA2780GR
廠商: NEC Corp.
英文描述: SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODE
中文描述: 開關N溝道功率MOSFET /肖特基二極管
文件頁數(shù): 4/6頁
文件大小: 64K
代理商: UPA2780GR
Data Sheet G16419EJ1V0DS
4
μ
PA2780GR
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (SCHOTTKY)
r
t
°
C
0.1
1
10
100
1000
Single pulse
Mounted on ceramic substrate of 1200 mm
2
x 2.2 mm
R
th(j-A)
= 125°C/W
PW - Pulse Width - s
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
I
D
0.2 0.3 0.4
0.1
0
0
20
60
40
80
10
50
30
70
0.5 0.6
0.8 0.9
1
0.7
V
GS
= 10 V
4.5 V
4.0 V
Pulsed
V
DS
- Drain to Source Voltage - V
V
G
V
DS
= 10 V
I
D
= 1 mA
1
2
3
50
0
50
100
150
25
25
75
125
0
T
ch
- Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
D
1
0.1
30
15
10
5
0
10
100
Pulsed
V
GS
= 4.0 V
4.5 V
10 V
I
D
- Drain Current - A
R
D
4
0
8
12
2
6
10
14
16
20
18
Pulsed
20
18
16
14
12
10
8
6
4
2
0
I
D
= 7 A
V
GS
- Gate to Source Voltage - V
1 m
10 m
100 m
1
10
100
1000
相關PDF資料
PDF描述
UPA607 P-CHANNEL MOS FET 6-PIN 2 CIRCUITS FOR SWITCHING
UPA607T P-CHANNEL MOS FET 6-PIN 2 CIRCUITS FOR SWITCHING
UPA679TB N/P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA801T NPN SILICON HIGH FREQUENCY
UPA801T-T1-A NPN SILICON HIGH FREQUENCY
相關代理商/技術參數(shù)
參數(shù)描述
UPA2780GR-E1-A 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 14A 8-Pin Power SOP T/R
UPA2781 制造商:未知廠家 制造商全稱:未知廠家 功能描述:UPA2781GR Data Sheet | Data Sheet[04/2003]
UPA2781GR 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODE
UPA2781GR-E1 制造商:Renesas Electronics Corporation 功能描述:
UPA2781GR-E2 制造商:Renesas Electronics Corporation 功能描述: