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參數(shù)資料
| 型號： | UPA2719GR-A |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 30 V, 0.0255 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | POWER, SOP-8 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 140K |
| 代理商： | UPA2719GR-A |
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MOS FIELD EFFECT TRANSISTOR
PA2719GR
SWITCHING
P-CHANNEL POWER MOS FET
DATA SHEET
Document No. G16953EJ1V0DS00 (1st edition)
Date Published July 2004 NS CP(K)
Printed in Japan
2004
DESCRIPTION
The
PA2719GR is P-Channel MOS Field Effect Transistor
designed for power management applications of notebook
computers and Li-ion battery protection circuit.
FEATURES
Low on-state resistance
RDS(on)1 = 13 m
MAX. (VGS = 10 V, ID = 5.0 A)
RDS(on)2 = 20.9 m
MAX. (VGS = 4.5 V, ID = 5.0 A)
Low Ciss: Ciss = 2010 pF TYP.
Built-in gate protection diode
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
PA2719GR
Power SOP8
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
–30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m20
V
Drain Current (DC)
ID(DC)
m10
A
Drain Current (pulse)
Note1
ID(pulse)
m100
A
Total Power Dissipation
Note2
PT1
2
W
Total Power Dissipation
Note3
PT2
2
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to + 150
°C
Single Avalanche Current
Note4
IAS
10
A
Single Avalanche Energy
Note4
EAS
10
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Mounted on ceramic substrate of 1200 mm
2 x 2.2 mm
3. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm, PW = 10 sec
4. Starting Tch = 25°C, VDD = –15 V, RG = 25
, L = 100
H, VGS = –20 → 0 V
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
1.27
0.12 M
6.0 ±0.3
4.4
0.40
+0.10
–0.05
0.78 MAX.
0.05
MIN.
1.8
MAX.
1.44
0.8
0.5 ±0.2
0.15
+0.10
–0.05
5.37 MAX.
0.10
14
85
1, 2, 3
: Source
4
: Gate
5, 6, 7, 8 : Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
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