參數(shù)資料
型號(hào): UPA1916TE
廠商: NEC Corp.
英文描述: P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
中文描述: P溝道MOS場(chǎng)效應(yīng)晶體管開(kāi)關(guān)
文件頁(yè)數(shù): 5/8頁(yè)
文件大小: 62K
代理商: UPA1916TE
Data Sheet G15635EJ1V0DS
5
μ
PA1916
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d
,
r
,
d
,
f
1
0.1
1
10
10
100
1000
V
DD
=
6.0 V
V
GS
=
4.0
V
R
G
= 10
t
d(on)
t
d(off)
t
f
t
r
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
t
°
C
1000
100
10
1
0.001
1000
100
10
1
0.1
0.01
Single Pulse
Without board
Mounted on 250mm
2
×
35 m copper pad
connected to drain electrode in
50mm
×
50mm
×
1.6mm FR-4 board
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
5
I
D
=
4.5 A
Q
G
- Gate Charge - nC
V
G
2
4
6
8
10
4
3
2
1
00
V
DD
=
10
V
6.0
V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
S
0.4
0.6
0.8
1.0
1.2
100
10
1
0.1
0.01
0.1
1.0
10000
1000
100
10
10
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
C
i
,
o
,
r
V
DS
- Drain to Source Voltage - V
C
oss
C
iss
C
rss
f = 1
MHz
V
GS
= 0
V
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