參數(shù)資料
型號(hào): UPA1913
廠商: NEC Corp.
英文描述: P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
中文描述: P溝道MOS場(chǎng)效應(yīng)晶體管開關(guān)
文件頁(yè)數(shù): 5/8頁(yè)
文件大?。?/td> 71K
代理商: UPA1913
Data Sheet D13807EJ2V0DS00
5
μ
PA1913
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
10
0.1
100
1000
10000
1
10
100
f = 1
MHz
V
GS
= 0V
C
iss
C
rss
C
oss
0.1
1
10
I
D
- Drain Current - A
t
d
,
r
,
d
,
f
1000
10000
100
10
t
d(off)
t
d(on)
t
f
t
r
SWITCHING CHARACTERISTICS
V
DD
=
10 V
V
GS(on)
=
4.0 V
R
G
0.01
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
I
F
V
F(S-D)
- Source to Drain Voltage - V
Q
G
- Gate Charge - nC
0
1
3
5
7
9
8
4
6
2
10
DYNAMIC INPUT CHARACTERISTICS
V
G
-
0
4
2
6
8
V
DD
=
16 V
10 V
I
D
=
4.5 A
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - S
r
t
10
0.1
1
100
1000
1
0.001
0.01
0.1
10
100
1000
Mounted on 250 mm x 35
μ
m
Copper Pad
Connected to Drain Electrode
in 50 mm x 50 mm x 1.6 mm
FR-4 Board Single Pulse
Without Board
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