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參數(shù)資料
| 型號(hào)： | UPA1912TE |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)晶體管開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 59K |
| 代理商： | UPA1912TE |
Data Sheet D13806EJ2V0DS00
3
μ
PA1912
TYPICAL CHARCTERISTICS (T
A
= 25
°
C)
30
60
90
120
150
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
d
T
A
- Ambient Temperature -
C
V
DS
- Drain to Source Voltage - V
I
D
100
10
1
0.1
1
10
100
FORWARD BIAS SAFE OPERATING AREA
2
x 35
μ
m copper
Single Pulse
x
50mm
x
1.6mm FR-4 board.
I
D(pulse)
P
W
=
1
ms
R
DSon
Lmted
(V
GS
=
45
V
I
D(DC)
P
W
=
100
ms
P
W
=
5
s
P
W
=
10
ms
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
0.2
0.4
0.6
0.8
1.0
20
16
12
8
4
0
V
GS
=
4.5
V
V
GS
=
4.0
V
V
GS
=
2.5
V
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
100
10
1
0.1
0.01
0.001
0.0001
0.00001
0
1.0
2.0
3.0
V
DS
=
10 V
T
A
= 125C
75C
T
A
= 25C
25C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
G
V
=
10
V
I
D
=
1
mA
50
0
50
100
150
0.5
1.0
1.5
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
|
y
f
|
V
DS
=
10
V
0.01
0.1
1
10
100
100
10
1
0.1
0.01
T
A
=
25C
25C
75C
125C
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|---|---|
| UPA1913 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1913TE | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1914 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1913 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1913TE | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1914 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1914TE | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1914TE-T1 | 制造商:Renesas Electronics Corporation 功能描述: |
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