參數(shù)資料
型號: UPA1912
廠商: NEC Corp.
英文描述: P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
中文描述: P溝道MOS場效應晶體管開關
文件頁數(shù): 4/8頁
文件大?。?/td> 59K
代理商: UPA1912
Data Sheet D13806EJ2V0DS00
4
μ
PA1912
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
D
0.01
0.1
1
10
100
120
100
80
60
40
V
GS
=
2.5 V
T
A
=125
°
C
T
A
= 75
°
C
T
A
= 25
°
C
T
A
=
25
°
C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
D
0.01
0.1
1
10
100
60
50
40
30
V
GS
=
4.0
V
T
A
=125
°
C
T
A
= 75
°
C
T
A
= 25
°
C
T
A
=
25
°
C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
D
0.01
0.1
1
10
100
60
50
40
30
V
GS
=
4.5
V
T
A
=125
°
C
T
A
= 75
°
C
T
A
= 25
°
C
T
A
=
25
°
C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
70
T
ch
- Channel Temperature -
°
C
R
D
I
D
=
2.5
A
50
0
50
100
150
60
50
40
30
V
GS
=
2.5
V
V
GS
=
4.0
V
V
GS
=
4.5
V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
V
GS
- Gate to Source Voltage - V
R
D
2
4
6
8
10
80
60
40
20
0
I
D
=
2.5 A
0.1
1.0
10000
1000
100
10
10
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
C
i
,
o
,
r
V
DS
- Drain to Source Voltage - V
C
oss
C
rss
C
iss
f = 1
MHz
V
GS
= 0
V
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