參數(shù)資料
型號: UPA1911ATE
廠商: NEC Corp.
英文描述: P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
中文描述: P溝道MOS場效應(yīng)晶體管開關(guān)
文件頁數(shù): 4/8頁
文件大?。?/td> 382K
代理商: UPA1911ATE
Data Sheet G15044EJ1V0DS
4
μ
PA1911A
0.01
0.10
1.00
10.00
100.00
300
250
200
150
100
50
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
R
D
T
A
=
25
°
C
T
A
=
+
75
°
C
T
A
=
+
125
°
C
T
A
=
+
25
°
C
V
GS
=
2.5 V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
0.1
1.0
10.0
150
V
DS
- Drain to Source Voltage - V
C
i
,
o
,
r
1000
100
10
f = 1MH
Z
V
GS
= 0V
C
rss
C
oss
C
iss
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
200
V
GS
=
4.0 V
1.00
0.10
0.01
10.00
100.00
I
D
- Drain Current - A
R
D
150
100
50
0
T
A
=
25
°
C
T
A
=
+
25
°
C
T
A
=
+
75
°
C
T
A
=
+
125
°
C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
200
V
GS
=
4.5 V
1.00
0.10
0.01
10.00
100.00
I
D
- Drain Current - A
R
D
150
100
50
0
T
A
=
25
°
C
T
A
=
+
75
°
C
T
A
=
+
25
°
C
T
A
=
+
125
°
C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
200
I
D
=
1.5 A
50
0
50
100
150
T
ch
- Channel Temperature -
°
C
R
D
150
100
50
0
V
GS
=
4.5 V
V
GS
=
4.0 V
V
GS
=
2.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
200
0.0
2.0
V
GS
- Gate to Source Voltage - V
4.0
6.0
8.0
10.0
12.0
R
D
150
100
50
0
I
D
=
1.5 A
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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UPA1911TE 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1912 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1912TE 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1913 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING