參數(shù)資料
型號: UPA1911
廠商: NEC Corp.
英文描述: P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
中文描述: P溝道MOS場效應(yīng)晶體管開關(guān)
文件頁數(shù): 3/8頁
文件大?。?/td> 65K
代理商: UPA1911
Data Sheet D13455EJ1V0DS00
3
μ
PA1911
TYPICAL CHARACTERISTICS (T
A
= 25°C)
30
T
A
- Ambient Temperature -
C
150
60
90
20
60
80
40
0
100
120
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
d
FORWARD BIAS SAFE OPERATING AREA
10
100
I
D
1
V
DS
- Drain to Source Voltage - V
100
10
1
0.1
0.1
0.01
100ms
5s
10
ms
PW
=
1
ms
DSon
=
R
GS
45
V
I
D
(pulse)
I
D
(
DC
)
Single Pulse
Mounted on 250mm x 35 m Copper Pad
Connected to Drain Electrode in
50mm x 50mm x 1.6mm FR-4 Board
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
0.5
0
2
2.5
3
1
1.5
1
0
3
4
2
5
V
GS
=
3.5
V
3.0 V
2.5 V
2.0 V
1.5 V
0.01
0.001
0.0001
0.00001
0.5
0
1.0
1.5
2.0
2.5
3.0
10
1
0.1
V
GS
- Gate to Sorce Voltage - V
V
DS
=
10 V
TRANSFER CHARACTERISTICS
I
D
T
A
= 125C
75C
25C
25C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
DS
=
10 V
I
D
=
1 mA
T
ch
- Channel Temperature - C
V
G
50
50
100
0
150
1.5
1.0
0.5
1
10
100
0.1
V
DS
=
10V
T
A
=
25
C
25
C
I
D
- Drain Current - A
|
f
|
1
10
0.1
0.01
0.01
100
75
C
125
C
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
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