參數(shù)資料
型號: UPA1874B
廠商: NEC Corp.
英文描述: N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
中文描述: N溝道MOS場效應(yīng)晶體管開關(guān)
文件頁數(shù): 2/7頁
文件大?。?/td> 145K
代理商: UPA1874B
Data Sheet G16743EJ1V0DS
2
μ
PA1874B
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30.0
V, V
GS
= 0
V
1.0
μ
A
Gate Leakage Current
I
GSS
V
GS
= ±12.0
V, V
DS
= 0
V
±
10.0
μ
A
Gate Cut-off Voltage
Forward Transfer Admittance
Note
V
GS(off)
V
DS
= 10.0
V, I
D
= 1.0
mA
0.50
1.00
1.50
V
| y
fs
|
V
DS
= 10.0
V, I
D
= 4.0
A
5
S
Drain to Source On-state Resistance
Note
R
DS(on)1
V
GS
= 4.5
V, I
D
= 4.0
A
9.0
11.5
14.0
m
R
DS(on)2
V
GS
= 4.0
V, I
D
= 4.0
A
9.5
12.0
14.5
m
R
DS(on)3
V
GS
= 3.1
V, I
D
= 4.0
A
10.0
13.0
16.5
m
R
DS(on)4
V
GS
= 2.5
V, I
D
= 4.0
A
11.0
15.0
19.5
m
Input Capacitance
C
iss
V
DS
= 10.0
V
930
pF
Output Capacitance
C
oss
V
GS
= 0
V
170
pF
Reverse Transfer Capacitance
C
rss
f = 1.0
MHz
120
pF
Turn-on Delay Time
t
d(on)
V
DD
= 10.0
V, I
D
= 4.0
A
46
ns
Rise Time
t
r
V
GS
= 4.0
V
230
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
260
ns
Fall Time
t
f
250
ns
Total Gate Charge
Q
G
V
DD
= 24.0
V
10.0
nC
Gate to Source Charge
Q
GS
V
GS
= 4.0
V
2.0
nC
Gate to Drain Charge
Body Diode Forward Voltage
Note
Q
GD
I
D
= 8.0
A
4.5
nC
V
F(S-D)
I
F
= 8.0
A, V
GS
= 0
V
0.82
V
Reverse Recovery Time
t
rr
I
F
= 8.0
A, V
GS
= 0
V
150
ns
Reverse Recovery Charge
Q
rr
di/dt = 50
A/
μ
s
80
nC
Note
Pulsed: PW
350
μ
s, Duty Cycle
2%
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
1%
τ
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
GS
Wave Form
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
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