參數(shù)資料
型號(hào): UPA1871GR-9JG
廠商: NEC Corp.
英文描述: N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
中文描述: N溝道MOS場(chǎng)效應(yīng)晶體管開(kāi)關(guān)
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 65K
代理商: UPA1871GR-9JG
Data Sheet G14887EJ2V0DS
2
μ
PA1871
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30
V, V
GS
= 0
V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
= ±12
V, V
DS
= 0
V
±
10
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 1
mA
0.5
1.0
1.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10
V, I
D
= 3.0
A
5
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 4.5
V, I
D
= 3.0
A
15.0
20.5
26.0
m
R
DS(on)2
V
GS
= 4.0
V, I
D
= 3.0
A
16.0
21.5
27.0
m
R
DS(on)3
V
GS
= 2.5
V, I
D
= 3.0
A
21.0
27.8
38.0
m
Input Capacitance
C
iss
V
DS
= 10
V
930
pF
Output Capacitance
C
oss
V
GS
= 0
V
220
pF
Reverse Transfer Capacitance
C
rss
f = 1
MHz
105
pF
Turn-on Delay Time
t
d(on)
V
DD
= 10
V, I
D
= 3.0
A
55
ns
Rise Time
t
r
V
GS(on)
= 4.0
V
180
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
260
ns
Fall Time
t
f
230
ns
Total Gate Charge
Q
G
V
DD
= 24
V
9
nC
Gate to Source Charge
Q
GS
V
GS
= 4.0
V
2
nC
Gate to Drain Charge
Q
GD
I
D
= 6.0
A
4
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 6.0
A, V
GS
= 0
V
0.80
V
Reverse Recovery Time
t
rr
I
F
= 6.0
A, V
GS
= 0
V
180
ns
Reverse Recovery Charge
Q
rr
di/dt = 50
A
/
μ
s
120
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1
s
Duty Cycle
1%
μ
V
GS
Wave Form
V
DS
Wave Form
V
GS
10%
90%
V
GS
(on)
10%
0
V
DS
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
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