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參數(shù)資料
| 型號： | UPA1851GR-9JG |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 65K |
| 代理商： | UPA1851GR-9JG |
Data Sheet D12733EJ2V0DS00
3
μ
PA1851
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
30
150
60
90
20
60
80
40
0
100
120
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
d
T
A
- Ambient Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
10
100
I
D
1
V
DS
- Drain to Source Voltage - V
100
10
1
0.1
0.1
0.01
Single Pulse
Mounted on Ceramic
Substrate of 50 cm x 1.1 mm
P
D
(FET1) : P
D
(FET2) = 1:1
I
D
(pulse)
I
D
(DC)
R
DSon
Lmt10
(@V
GS
=
V
100ms
DC
10
ms
PW
=
1
ms
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
0.2
0
0.8
1.0
0.4
0.6
4
0
12
8
2
10
6
V
GS
=
10 V
4.5 V
4.0 V
10
1
0.1
0.01
0.001
0.0001
0.00001
0
1
2
3
4
5
6
100
25
C
75
C
T
A
= 125
C
V
GS
- Gate to Source Voltage - V
25
C
V
DS
=
10 V
TRANSFER CHARACTERISTICS
I
D
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature -
C
V
G
V
DS
=
10 V
I
D
=
1 mA
50
50
100
0
150
1.5
2.0
1.0
0.5
1
10
100
0.1
V
DS
=
10 V
I
D
- Drain Current - A
|
f
|
1
10
0.1
100
T
A
=
25
C
25
C
75
C
125
C
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
#
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| UPA1854 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:UPA1854 Data Sheet | Data Sheet[05/2001] |
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