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參數資料
| 型號： | UPA1851 |
| 廠商： | NEC Corp. |
| 英文描述： | Color Coded Ring Receptacle; For Use With:Shell Size: 10; Color:Red; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| 中文描述： | P溝道MOS場效應晶體管開關 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 65K |
| 代理商： | UPA1851 |
Data Sheet D12733EJ2V0DS00
2
μ
PA1851
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-off Current
I
DSS
V
DS
=
–
20 V, V
GS
= 0
V
–
10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
!
20 V, V
DS
= 0
V
!
10
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
=
–
10
V, I
D
=
–
1 mA
–
1.0
–
1.5
–
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
=
–
10
V, I
D
=
–
1.5
A
1
3.5
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
=
–
10
V, I
D
=
–
1.5
A
83
105
m
R
DS(on)2
V
GS
=
–
4.5
V, I
D
=
–
1.5
A
141
210
m
R
DS(on)3
V
GS
=
–
4.0
V, I
D
=
–
1.5
A
163
250
m
Input Capacitance
C
iss
V
DS
=
–
10
V
220
pF
Output Capacitance
C
oss
V
GS
= 0
V
240
pF
Reverse Transfer Capacitance
C
rss
f = 1
MHz
50
pF
Turn-on Delay Time
t
d(on)
V
DD
=
–
10
V
110
ns
Rise Time
t
r
I
D
=
–
2.0
A
500
ns
Turn-off Delay Time
t
d(off)
V
GS(on)
=
–
4.0
V
160
ns
Fall Time
t
f
R
G
= 10
310
ns
Total Gate Charge
Q
G
V
DD
=
–
10
V
8.3
nC
Gate to Source Charge
Q
GS
I
D
=
–
2.5
A
2.4
nC
Gate to Drain Charge
Q
GD
V
GS
=
–
4.0
V
4.7
nC
Diode Forward Voltage
V
F(S-D)
I
F
= 2.5
A, V
GS
= 0
V
0.82
V
Reverse Recovery Time
t
rr
I
F
= 2.5
A, V
GS
= 0
V
40
ns
Reverse Recovery Charge
Q
rr
di/dt = 20
A
/
μ
s
6.5
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
(
)
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
≤
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
(
)
10 %
90 %
V
GS
(on)
10 %
0
I
D
(
)
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
τ
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
=
2 mA
#
#
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