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參數(shù)資料
| 型號： | UPA1818GR-9JG |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 75K |
| 代理商： | UPA1818GR-9JG |
Data Sheet G16254EJ1V0DS
4
μ
PA1818
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
0
- 10
- 20
- 30
- 40
0
- 0.2
- 0.4
- 0.6
- 0.8
Pulsed
2.5 V
V
GS
=
4.5 V
4.0 V
I
D
- 0.0001
- 0.001
- 0.01
- 0.1
- 1
- 10
- 100
- 0.5
- 1
- 1.5
- 2
- 2.5
V
DS
=
10 V
Pulsed
T
A
= 125
°
C
75
°
C
25
°
C
25
°
C
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
- 0.4
- 0.6
- 0.8
- 1
- 1.2
- 1.4
-50
0
50
100
150
V
DS
=
10 V
I
D
=
1.0 mA
|
f
0.1
1
10
100
- 0.01
- 0.1
- 1
- 10
- 100
V
DS
=
10 V
Pulsed
T
A
=
25
°
C
25
°
C
75
°
C
125
°
C
T
ch
- Channel Temperature -
°
C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE
vs.GATE TO SOURCE VOLTAGE
0
10
20
30
-50
0
50
100
150
I
D
=
5.0 A
Pulsed
4.0 V
4.5 V
V
GS
=
2.5 V
0
10
20
30
0
-2
V
GS
- Gate to Source Voltage - V
-4
-6
-8
-10
-12
I
D
=
5.0 A
Pulsed
R
D
T
ch
– Channel Temperrature -
°
C
R
D
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1818GR-9JG-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
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| UPA1820 | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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