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參數(shù)資料
| 型號(hào)： | UPA1818 |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)晶體管開關(guān) |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 80K |
| 代理商： | UPA1818 |
Data Sheet G16254EJ1V0DS
5
μ
PA1818
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
0
- 0.01
10
20
30
- 0.1
- 1
- 10
- 100
V
GS
=
4.5 V
Pulsed
T
A
= 125
°
C
75°C
25°C
-25°C
0
- 0.01
10
20
30
- 0.1
- 1
- 10
- 100
V
GS
=
4.0 V
Pulsed
T
A
= 125
°
C
75
°
C
25
°
C
25°C
R
D
I
D
- Drain Current - A
R
D
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
0
- 0.01
10
20
30
- 0.1
- 1
- 10
- 100
V
GS
=
2.5 V
Pulsed
T
A
= 125
°
C
75
°
C
25
°
C
25
°
C
100
1000
10000
- 0.1
- 1
- 10
- 100
V
GS
= 0 V
f = 1.0 MHz
C
iss
C
oss
C
rss
R
D
I
D
- Drain Current - A
C
i
,
o
,
r
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
100
1000
10000
- 0.01
- 0.1
- 1
- 10
V
DD
=
10 V
V
GS
=
4.0 V
R
G
= 10
t
d(off)
t
d(on)
t
f
t
r
0.01
0.1
1
10
100
0.4
0.6
0.8
1
1.2
V
GS
= 0 V
Pulsed
t
d
,
r
,
d
,
f
I
D
- Drain Current - A
I
F
V
F(S-D)
- Source to Drain Voltage - V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1818GR-9JG | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1818GR-9JG-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1819 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1819GR-9JG | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1819GR-9JG-E1-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 12A 8-Pin Power TSSOP T/R |
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