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參數(shù)資料
| 型號： | UPA1817GR-9JG |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 74K |
| 代理商： | UPA1817GR-9JG |
Data Sheet G16253EJ1V0DS
3
μ
PA1817
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
d
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
P
T
0
0.5
1
1.5
2
2.5
0
25
50
75
100
125
150
175
Mounted on ceramic substrate of
5000 mm
2
x 1.1 mm
Mounted on FR-4 board
of 2500 mm
2
x 1.6 mm
T
A
- Ambient Temperature -
°
C
T
A
- Ambient Temperature -
°
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- 0.01
- 0.1
- 1
- 10
- 100
- 0.1
- 1
- 10
- 100
100 ms
10 ms
I
D(pulse)
I
D(DC)
PW = 1 ms
R
DS(on)
Limited
(V
GS
=
4.5 V)
DC
Single pulse
Mounted on ceramic substrate of
5000 mm
2
x 1.1 mm
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
t
°
C
0.1
1
10
100
1000
Single pulse
Mounted on FR-4 board of
2500 mm
2
x 1.6 mm
125
°
C/W
Mounted on ceramic substrate of
5000 mm
2
x 1.1 mm
62.5
°
C/W
PW - Pulse Width - s
1 m
10 m
100 m
1
10
100
1000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA1817 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA2707GR-E1 | SWITCHING N-CHANNEL POWER MOSFET |
| UPA2707GR-E1-A | SWITCHING N-CHANNEL POWER MOSFET |
| UPA2707GR-E2 | SWITCHING N-CHANNEL POWER MOSFET |
| UPA2707GR-E2-A | SWITCHING N-CHANNEL POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1817GR-9JG-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1817GR-9JG-E1-A | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 20V 12A 8-Pin Power TSSOP T/R Cut Tape |
| UPA1817GR-9JG-E2 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1818 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1818GR-9JG | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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