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參數(shù)資料
| 型號(hào)： | UPA1815 |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 68K |
| 代理商： | UPA1815 |
Data Sheet D13805EJ2V0DS00
5
μ
PA1815
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
10
1
100
1000
10000
10
100
f = 1
MHz
V
GS
= 0 V
C
iss
C
rss
C
oss
0.1
1
10
I
D
- Drain Current - A
t
(
,
(
,
100
1000
10
1
td
(off)
td
(on)
tf
tr
SWITCHING CHARACTERISTICS
V
DD
=
10
V
V
GS
(
on
) =
4.0
V
R
G
= 10
0.01
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
I
F
V
F(S-D)
- Source to Drain Voltage - V
Q
g
- Gate Charge - nC
0
5
10
15
20
25
30
DYNAMIC INPUT CHARACTERISTICS
V
G
-
0
4
2
6
8
10
V
DD
=
16 V
10 V
I
D
=
7 A
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
t
10
0.1
0.001
1
1000
100
0.01
0.1
1
10
1000
100
Mounted on ceramic
substrate of
50 cm
2
x
1.1 mm
Single Pulse
62.5
C/W
#
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| UPA1815GR-9JG | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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