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參數(shù)資料
| 型號(hào)： | UPA1812GR-9JG |
| 廠(chǎng)商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)晶體管開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 68K |
| 代理商： | UPA1812GR-9JG |
Data Sheet D12967EJ1V0DS00
3
μ
PA1812
TYPICAL CHARACTERISTICS (T
A
= 25 °C)
30
T
A
- Ambient Temperature -
C
150
60
90
20
60
80
40
0
100
120
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
d
FORWARD BIAS SAFE OPERATING AREA
10.0
100.0
I
D
1.0
V
DS
- Drain to Source Voltage - V
100
10
1
0.1
0.01
0.1
PW
=
1ms
10
ms
100ms
DC
R
=
(@V
GS
-
45
V
I
D
(pulse)
I
D
(DC)
T
A
= 25
C
Single Pulse
Mounted on Ceramic
Substrate of 5000 mm x 1.1 mm
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
0.2
0.8
1.0
0.4
0.6
5
15
20
10
0
4.0 V
V
GS
=
10
V
4.5 V
Pulsed
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
0
1.0
2.0
3.0
4.0
100
10
1
0.1
0.01
0.001
0.0001
V
DS
=
10 V
T
A
= 25C
25C
T
A
= 125C
75C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
G
V
DS
=
10
V
I
D
=
1
mA
50
0
150
50
100
1.0
2.0
1.2
1.4
1.6
1.8
1
10
0.1
0.1
1
10
100
100
I
D
- Drain Current - A
|
f
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
DS
=
10 V
T
A
=
25 C
25 C
75 C
125 C
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