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參數(shù)資料
| 型號(hào)： | UPA1812 |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 68K |
| 代理商： | UPA1812 |
Data Sheet D12967EJ1V0DS00
5
μ
PA1812
0.1
1
10
I
D
- Drain Current - A
t
(
,
(
,
SWITCHING CHARACTERISTICS
10
V
DD
=
10 V
V
GS(on)
=
4
V
R
G
1000
100
tr
tf
td
(off)
td
(on)
0.0001
0.001
0.1
100
1
0.4
0.6
0.8
1
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
I
F
V
F(S-D)
- Source to Drain Voltage - V
0.01
10
Q
g
- Gate Charge - nC
0
20
10
30
15
5
25
DYNAMIC INPUT CHARACTERISTICS
V
G
-
I
D
=
5 A
2
4
6
8
10
V
DD
=
24 V
35
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
t
10
0.1
0.001
1
1000
100
0.01
0.1
1
10
1000
100
Mounted on ceramic
substrate of
50 cm
2
x
1.1 mm
Single Pulse
62.5
C/W
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