參數(shù)資料
型號: UPA1760
廠商: NEC Corp.
元件分類: 功率晶體管
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級
文件頁數(shù): 3/8頁
文件大小: 68K
代理商: UPA1760
Data Sheet G13891EJ1V0DS00
3
μ
PA1760
TYPICAL CHARACTERISTICS (T
A
= 25°C)
FORWARD TRANSFER CHARACTERISTICS
V
GS
-
Gate to Source Voltage - V
I
D
0.1
Pulsed
V
DS
=
10
V
1
2
3
4
5
1
10
100
T
A
=125C
T
A
=75C
T
A
=25C
T
A
=
25C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
0.0
0.8
1.2
1.6
10
0.4
Pulsed
0
5
20
30
25
V
GS
=10
V
V
GS
=4.0
V
V
GS
=4.5
V
15
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
f
|
V
=10V
Pulsed
1
1
10
100
10
100
0.1
0.1
T
A
=75C
T
A
=125C
T
A
=
25C
T
A
= 25C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
V
GS
- Gate to Source Voltage - V
R
D
10
10
15
Pulsed
0
5
I
D
=4
A
70
60
0
80
50
40
30
20
90
I
D
=8
A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
D
1
10
100
20
0.1
40
60
80
100
V
GS
=10V
V
GS
=4.5V
V
GS
=4.0V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
G
V
DS
=10 V
I
D
=1 mA
50
0
150
50
100
1.0
2.0
3.0
#
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參數(shù)描述
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