參數資料
型號: UPA1757G
廠商: NEC Corp.
元件分類: 功率晶體管
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關功率場效應晶體管 工業(yè)級
文件頁數: 1/8頁
文件大?。?/td> 58K
代理商: UPA1757G
The information in this document is subject to change without notice.
1998
MOS FIELD EFFECT TRANSISTOR
μ
PA1757
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D12910EJ2V0DS00 (2nd edition)
Date Published September 1998 NS CP (K)
Printed in Japan
DATA SHEET
1.27
0.12 M
6.0 ±0.3
4.4
0.40
+0.10
0.78 Max.
0
1
1
0.8
0.5 ±0.2
0
+
5.37 Max.
0.10
1
4
8
5
1
2
7, 8
3
4
5, 6
; Source 1
; Gate 1
; Drain 1
; Source 2
; Gate 2
; Drain 2
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Description
Package Drawing (Unit : mm)
This product is Dual N-Channel MOS Field Effect Transistor
designed for power management application of
notebook computers, and Li-ion battery application.
Features
Dual MOS FET chips in small package
2.5 V gate drive type and low on-resistance
R
DS(on)1
= 23 m
(
MAX.) (V
GS
= 4.5 V, I
D
= 3.5 A)
R
DS(on)2
= 32 m
(
MAX.) (V
GS
= 2.5 V, I
D
= 3.5 A)
Low C
iss
C
iss
= 750 pF Typ.
Built-in G-S protection diode
Small and surface mount package
(Power SOP8)
Ordering information
Part Number
Package
μ
PA1757G
Power SOP8
Absolute Maximum Ratings (T
A
= 25 °C)
Drain to source voltage
V
DSS
20
V
Gate to source voltage
V
GSS
±12.0
V
Drain current (DC)
Drain current (pulse)
Note1
Total power dissipation (1 unit)
Note2
Total power dissipation (2 unit)
Note2
I
D(DC)
±7.0
A
I
D(pulse)
±28
A
P
T
1.7
W
P
T
2.0
W
Channel temperature
T
ch
150
°C
Storage temperature
T
stg
55 to +150
°C
Notes 1.
PW
10
μ
s, Duty Cycle
1 %
2.
T
A
= 25 °C, Mounted on ceramic substrate of 2000 mm
2
x 1.1 mm
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may
be applied to this device.
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