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參數(shù)資料
| 型號(hào)： | UPA1725G |
| 廠商： | NEC Corp. |
| 元件分類： | 功率晶體管 |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí) |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 64K |
| 代理商： | UPA1725G |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1999, 2000
MOS FIELD EFFECT TRANSISTOR
μ
PA1725
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
Date Published
Printed in Japan
G14049EJ1V0DS00 (1st edition)
January 2000 NS CP(K)
The mark
shows major revised points.
DESCRIPTION
This
μ
PA1725 is N-Channel MOS Field Effect Transistor
designed for power management applications of
notebook computers and so on.
PACKAGE DRAWING (Unit : mm)
FEATURES
2.5-V gate drive and low on-resistance
R
DS(on)1
= 21.0 m
MAX. (V
GS
= 4.5 V, I
D
= 3.5 A)
R
DS(on)2
= 22.0 m
MAX. (V
GS
= 4.0 V, I
D
= 3.5 A)
R
DS(on)3
= 30.0 m
MAX. (V
GS
= 2.5 V, I
D
= 3.5 A)
Low C
iss
: C
iss
= 950 pF TYP.
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA1725G
Power SOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
20
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±12
V
Drain Current (DC)
Drain Current (pulse)
Note1
Total Power Dissipation (T
A
= 25°C)
Note2
I
D(DC)
±7
A
I
D(pulse)
±28
A
P
T
2.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
–55 to + 150
°C
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1 %
2.
Mounted on ceramic substrate of 1200 mm
2
x 2.2mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
1.27
0.12 M
6.0 ±0.3
4.4
0.40
+0.10
0.78 MAX.
0
1
1
0.8
0.5 ±0.2
0
+
–
5.37 MAX.
0.10
1
4
8
5
1,
2,3
4
5,6,7,8
; Non connection
; Source
; Gate
; Drain
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